CAT28F001PI-70BT

更新时间： 2024-11-26 05:17:35

品牌	Logo	应用领域
CATALYST		闪存
页数	文件大小	规格书
18页	112K
描述
1 Megabit CMOS Boot Block Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CAT28F001PI-70BT 数据手册

Licensed Intel

second source

CAT28F001

1 Megabit CMOS Boot Block Flash Memory

FEATURES

■ Deep Powerdown Mode

■ Fast Read Access Time: 70/90/120/150 ns

■ On-Chip Address and Data Latches

■ Blocked Architecture

— 0.05 µA I_CCTypical

— 0.8 µA I_PPTypical

■ Hardware Data Protection

■ Electronic Signature

■ 100,000 Program/Erase Cycles and 10 Year

Data Retention

— One 8 KB Boot Block w/ Lock Out

• Top or Bottom Locations

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■ JEDEC Standard Pinouts:

— 32 pin DIP

■ Low Power CMOS Operation

■ 12.0V ± 5% Programming and Erase Voltage

■ Automated Program & Erase Algorithms

■ High Speed Programming

— 32 pin PLCC

— 32 pin TSOP

■ Reset/Deep Power Down Mode

■ Commercial, Industrial and Automotive

Temperature Ranges

DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after sale

code updates.

The CAT28F001 is designed with a signature mode

whichallowstheusertoidentifytheICmanufacturerand

device type. The CAT28F001 is also designed with on-

ChipAddressLatches, DataLatches, Programmingand

Erase Algorithms.

The CAT28F001 has a blocked architecture with one 8

KB Boot Block, two 4 KB Parameter Blocks and one 112

KB Main Block. The Boot Block section can be at the top

orbottomofthememorymapandincludesareprogram-

ming write lock out feature to guarantee data integrity. It

is designed to contain secure code which will bring up

the system minimally and download code to other loca-

tions of CAT28F001.

The CAT28F001 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, PLCC or TSOP packages.

BLOCK DIAGRAM

I/O –I/O

ADDRESS

COUNTER

I/O BUFFERS

WRITE STATE

MACHINE

ERASE VOLTAGE

SWITCH

STATUS

DATA

LATCH

SENSE

AMP

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

Y-GATING

Y-DECODER

A –A

8K-BYTE BOOT BLOCK

4K-BYTE PARAMETER BLOCK

112K-BYTE MAIN BLOCK

X-DECODER

VOLTAGE VERIFY

SWITCH

28F001 F01

Characteristics subject to change without notice

Doc. No. 25071-00 2/98 F-1

12 3 4 5 6 7...18

中文翻译

下载PDF

与CAT28F001PI-70BT相关器件

型号	品牌	获取价格	描述	数据表
CAT28F001PI-70T	ONSEMI	获取价格	128KX8 FLASH 12V PROM, 70ns, PDIP32, PLASTIC, DIP-32
CAT28F001PI-70TT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001PI-90B	ROCHESTER	获取价格	128KX8 FLASH 12V PROM, 90ns, PDIP32, PLASTIC, DIP-32
CAT28F001PI-90BT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001PI-90T	ONSEMI	获取价格	128KX8 FLASH 12V PROM, 90ns, PDIP32, PLASTIC, DIP-32
CAT28F001PI-90TT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001T-12B	CATALYST	获取价格	Flash, 128KX8, 120ns, PDSO32, 8 X 20 MM, TSOP-32
CAT28F001T-12B	ONSEMI	获取价格	128KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, TSOP-32
CAT28F001T-12BT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001T-12BT	ONSEMI	获取价格	1 Megabit CMOS Boot Block Flash Memory

与CAT28F001PI-70BT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

CAT28F001PI-70BT

CAT28F001PI-70BT 数据手册

与CAT28F001PI-70BT相关器件

与CAT28F001PI-70BT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CAT28F001PI-70BT

CAT28F001PI-70BT 数据手册

与CAT28F001PI-70BT相关器件

与CAT28F001PI-70BT相关文章

您还可以找

您在本页遇到什么问题？