Datasheet > 存储 > 闪存> CAT28F001HI-90TT

CAT28F001HI-90TT

更新时间： 2024-11-01 06:46:15

品牌	Logo	应用领域
安森美 - ONSEMI		闪存内存集成电路光电二极管
页数	文件大小	规格书
18页	113K
描述
1 Megabit CMOS Boot Block Flash Memory

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中文翻译

获取价格

数据手册
替代型号

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CAT28F001HI-90TT 数据手册

CAT28F001

1 Megabit CMOS Boot Block

Flash Memory

Licensed Intel

second source

FEATURES

■ Deep Powerdown Mode

— 0.05 µA I_CCTypical

■ Fast Read Access Time: 90/120 ns

■ On-Chip Address and Data Latches

■ Blocked Architecture

— 0.8 µA I_PPTypical

■ Hardware Data Protection

■ Electronic Signature

— One 8 KB Boot Block w/ Lock Out

• Top or Bottom Locations

■ 100,000 Program/Erase Cycles and 10 Year

Data Retention

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■ JEDEC Standard Pinouts:

— 32 pin DIP

■ Low Power CMOS Operation

■ 12.0V ± 5% Programming and Erase Voltage

■ Automated Program & Erase Algorithms

■ High Speed Programming

— 32 pin PLCC

— 32 pin TSOP

■ Reset/Deep Power Down Mode

■ "Green" Package Options Available

■ Commercial, Industrial and Automotive

Temperature Ranges

DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after sale

code updates.

The CAT28F001 is designed with a signature mode

whichallowstheusertoidentifytheICmanufacturerand

device type. The CAT28F001 is also designed with on-

ChipAddressLatches, DataLatches, Programmingand

Erase Algorithms.

The CAT28F001 has a blocked architecture with one 8

KB Boot Block, two 4 KB Parameter Blocks and one 112

KB Main Block. The Boot Block section can be at the top

orbottomofthememorymapandincludesareprogram-

ming write lock out feature to guarantee data integrity. It

is designed to contain secure code which will bring up

the system minimally and download code to other loca-

tions of CAT28F001.

The CAT28F001 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, PLCC or TSOP packages.

BLOCK DIAGRAM

I/O –I/O

ADDRESS

COUNTER

I/O BUFFERS

WRITE STATE

MACHINE

ERASE VOLTAGE

SWITCH

STATUS

DATA

LATCH

SENSE

AMP

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

Y-GATING

Y-DECODER

A –A

8K-BYTE BOOT BLOCK

4K-BYTE PARAMETER BLOCK

112K-BYTE MAIN BLOCK

X-DECODER

VOLTAGE VERIFY

SWITCH

Characteristics subject to change without notice

Doc. No. MD-1078, Rev. K

12 3 4 5 6 7...18

中文翻译

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CAT28F001HI-90TT 替代型号

型号	品牌	替代类型	描述	数据表
CAT28F001H-90TT	ONSEMI	功能相似	1 Megabit CMOS Boot Block Flash Memory
E28F001BX-T90	INTEL	功能相似	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

与CAT28F001HI-90TT相关器件

型号	品牌	获取价格	描述	数据表
CAT28F001HR-12TE13	CATALYST	获取价格	128KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
CAT28F001HR-15TE13	CATALYST	获取价格	128KX8 FLASH 12V PROM, 150ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
CAT28F001L-12	CATALYST	获取价格	Flash, 128KX8, 120ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
CAT28F001L-12BT	ONSEMI	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001L-12BT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001L-12TT	CATALYST	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001L-12TT	ONSEMI	获取价格	1 Megabit CMOS Boot Block Flash Memory
CAT28F001L-90B	CATALYST	获取价格	Flash, 128KX8, 90ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32
CAT28F001L-90B	ONSEMI	获取价格	128KX8 FLASH 12V PROM, 90ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32
CAT28F001L-90BT	ONSEMI	获取价格	1 Megabit CMOS Boot Block Flash Memory

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