Datasheet > CAT28C64BNI-12T

CAT28C64BNI-12T

更新时间： 2024-11-20 19:08:35

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
13页	74K
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数据手册

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CAT28C64BNI-12T 数据手册

CAT28C64B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

■ Fast read access times:

■ Commercial, industrial and automotive

– 90/120/150ns

temperature ranges

■ Low power CMOS dissipation:

– Active: 25 mA max.

■ Automatic page write operation:

– 1 to 32 bytes in 5ms

– Standby: 100 µA max.

– Page load timer

■ Simple write operation:

■ End of write detection:

– Toggle bit

– On-chip address and data latches

– Self-timed write cycle with auto-clear

– DATA polling

■ Fast write cycle time:

■ 100,000 program/erase cycles

■ 100 year data retention

– 5ms max.

■ CMOS and TTL compatible I/O

■ Hardware and software write protection

DESCRIPTION

The CAT28C64B is manufactured using Catalyst’s

advancedCMOSfloatinggatetechnology.Itisdesigned

to endure 100,000 program/erase cycles and has a data

retentionof100years.ThedeviceisavailableinJEDEC-

approved 28-pin DIP, TSOP, SOIC, or, 32-pin PLCC

package .

The CAT28C64B is a fast, low power, 5V-only CMOS

Parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V_CCpower up/down write protection

eliminate additional timing and protection hardware.

DATA Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C64B features hardware and software write

protection.

BLOCK DIAGRAM

8,192 x 8

EEPROM

ARRAY

ROW

DECODER

ADDR. BUFFER

& LATCHES

A –A

INADVERTENT

WRITE

PROTECTION

HIGH VOLTAGE

GENERATOR

32 BYTE PAGE

CONTROL

LOGIC

I/O BUFFERS

DATA POLLING

AND

TIMER

TOGGLE BIT

I/O –I/O

ADDR. BUFFER

& LATCHES

A –A

COLUMN

DECODER

Characteristics subject to change without notice

Doc. No. MD-1011, Rev. I

12 3 4 5 6 7...13

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与CAT28C64BNI-12T相关器件

型号	品牌	获取价格	描述	数据表
CAT28C64BNI-12TE13	ONSEMI	获取价格	IC 8K X 8 EEPROM 5V, 120 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM
CAT28C64BNI-12TE7	ONSEMI	获取价格	8KX8 EEPROM 5V, 120ns, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-12TE7	CATALYST	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-15	CATALYST	获取价格	64K-Bit CMOS PARALLEL E2PROM
CAT28C64BNI-15	ONSEMI	获取价格	8KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-15T	CATALYST	获取价格	64K-Bit CMOS PARALLEL E2PROM
CAT28C64BNI-15T	ONSEMI	获取价格	8KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-15TE13	ONSEMI	获取价格	8KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-15TE7	CATALYST	获取价格	EEPROM, 8KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
CAT28C64BNI-20	ONSEMI	获取价格	IC 8K X 8 EEPROM 5V, 200 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM