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CAT28C512L-12 PDF预览

CAT28C512L-12

更新时间: 2024-10-27 13:06:39
品牌 Logo 应用领域
CATALYST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 416K
描述
EEPROM, 64KX8, 120ns, Parallel, CMOS, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32

CAT28C512L-12 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.15最长访问时间:120 ns
命令用户界面:NO数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDIP-T32
JESD-609代码:e3长度:42.03 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
页面大小:128 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:5.08 mm最大待机电流:0.0002 A
子类别:EEPROMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:YES
宽度:15.24 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

CAT28C512L-12 数据手册

 浏览型号CAT28C512L-12的Datasheet PDF文件第2页浏览型号CAT28C512L-12的Datasheet PDF文件第3页浏览型号CAT28C512L-12的Datasheet PDF文件第4页浏览型号CAT28C512L-12的Datasheet PDF文件第5页浏览型号CAT28C512L-12的Datasheet PDF文件第6页浏览型号CAT28C512L-12的Datasheet PDF文件第7页 
E
CAT28C512/513  
512K-Bit CMOS PARALLEL EEPROM  
TM  
FEATURES  
I Fast Read Access Times: 120/150 ns  
I Automatic Page Write Operation:  
–1 to 128 Bytes in 5ms  
I Low Power CMOS Dissipation:  
–Active: 50 mA Max.  
–Page Load Timer  
–Standby: 200 µA Max.  
I Simple Write Operation:  
I End of Write Detection:  
–Toggle Bit  
DATA Polling  
–On-Chip Address and Data Latches  
–Self-Timed Write Cycle with Auto-Clear  
I Hardware and Software Write Protection  
I 100,000 Program/Erase Cycles  
I 100 Year Data Retention  
I Fast Write Cycle Time:  
–5ms Max  
I CMOS and TTL Compatible I/O  
I Commercial, Industrial and Automotive  
Temperature Ranges  
DESCRIPTION  
The CAT28C512/513 is manufactured using Catalyst’s  
advancedCMOSfloatinggatetechnology.Itisdesigned  
to endure 100,000 program/erase cycles and has a data  
retention of 100 years. The device is available in JEDEC  
approved 32-pin DIP, PLCC and TSOP packages.  
TheCAT28C512/513isafast,lowpower,5V-onlyCMOS  
parallel EEPROM organized as 64K x 8-bits. It requires  
a simple interface for in-system programming. On-chip  
address and data latches, self-timed write cycle with  
auto-clear and VCC power up/down write protection  
eliminate additional timing and protection hardware.  
DATA Polling and Toggle status bits signal the start and  
end of the self-timed write cycle. Additionally, the  
CAT28C512/513 features hardware and software write  
protection.  
BLOCK DIAGRAM  
65,536 x 8  
EEPROM  
ARRAY  
ROW  
DECODER  
ADDR. BUFFER  
& LATCHES  
A A  
7
15  
INADVERTENT  
WRITE  
PROTECTION  
HIGH VOLTAGE  
GENERATOR  
128 BYTE PAGE  
REGISTER  
V
CC  
CE  
OE  
WE  
CONTROL  
TIMER  
I/O BUFFERS  
DATA POLLING  
AND  
TOGGLE BIT  
I/O I/O  
0
7
ADDR. BUFFER  
& LATCHES  
A A  
COLUMN  
DECODER  
0
6
© 2004 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc. No. 1007, Rev. F  
1

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