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CAT25C64SE-1.8-GT3 PDF预览

CAT25C64SE-1.8-GT3

更新时间: 2024-12-01 05:08:35
品牌 Logo 应用领域
CATALYST 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
16页 414K
描述
64K-Bit SPI Serial CMOS EEPROM

CAT25C64SE-1.8-GT3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.75
Is Samacsys:N最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.8997 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

CAT25C64SE-1.8-GT3 数据手册

 浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第2页浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第3页浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第4页浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第5页浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第6页浏览型号CAT25C64SE-1.8-GT3的Datasheet PDF文件第7页 
Not recommended for new designs,  
replace with CAT25640  
CAT25C64  
64K-Bit SPI Serial CMOS EEPROM  
FEATURES  
DESCRIPTION  
I 10 MHz SPI compatible  
I 1.8 to 5.5 volt operation  
I Hardware and software protection  
I Low power CMOS technology  
I SPI modes (0,0 &1,1)  
TheCAT25C64isa64K-BitSPISerialCMOSEEPROM  
internally organized as 8Kx8 bits. Catalyst’s advanced  
CMOS Technology substantially reduces device power  
requirements. The CAT25C64 features a 64-byte page  
write buffer. The device operates via the SPI bus serial  
interface and is enabled though a Chip Select (CS). In  
addition to the Chip Select, the clock input (SCK), data  
in (SI) and data out (SO) are required to access the  
device. The HOLD pin may be used to suspend any  
serial communication without resetting the serial se-  
quence. The CAT25C64 is designed with software and  
hardware write protection features including Block write  
protection. The device is available in 8-pin DIP and  
SOIC packages.  
I Commercial, industrial and automotive  
temperature ranges  
I 1,000,000 program/erase cycles  
I 100 year data tetention  
I Self-timed write cycle  
I 8-pin DIP and SOIC  
I 64-Byte page write buffer  
I Block write protection  
– Protect 1/4, 1/2 or all of EEPROM array  
PIN CONFIGURATION  
FUNCTIONAL SYMBOL  
V
CC  
PDIP (P, L)  
SOIC (S, V)  
CS  
1
8
V
CC  
SI  
CS  
SO  
2
3
4
7
6
5
HOLD  
SCK  
SI  
CAT25C64  
WP  
WP  
SO  
V
SS  
HOLD  
SCK  
PIN FUNCTIONS  
Pin Name  
SO  
Function  
V
SS  
Serial Data Output  
Serial Clock  
SCK  
WP  
Write Protect  
VCC  
+1.8V to +5.5V Power Supply  
Ground  
VSS  
CS  
Chip Select  
SI  
Serial Data Input  
Suspends Serial Input  
HOLD  
© 2006 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc. No. 1112, Rev. B  
1

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