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CAT24C512YI-GT3 PDF预览

CAT24C512YI-GT3

更新时间: 2024-11-21 09:13:19
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
15页 167K
描述
512 kb I2C CMOS Serial EEPROM 128?Byte Page Write Buffer

CAT24C512YI-GT3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TSSOP包装说明:TSSOP, TSSOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
Factory Lead Time:1 week风险等级:0.83
其他特性:100 YEAR DATA RETENTION最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

CAT24C512YI-GT3 数据手册

 浏览型号CAT24C512YI-GT3的Datasheet PDF文件第2页浏览型号CAT24C512YI-GT3的Datasheet PDF文件第3页浏览型号CAT24C512YI-GT3的Datasheet PDF文件第4页浏览型号CAT24C512YI-GT3的Datasheet PDF文件第5页浏览型号CAT24C512YI-GT3的Datasheet PDF文件第6页浏览型号CAT24C512YI-GT3的Datasheet PDF文件第7页 
CAT24C512  
512 kb I2C CMOS Serial  
EEPROM  
Description  
The CAT24C512 is a 512 kb Serial CMOS EEPROM, internally  
organized as 65,536 words of 8 bits each.  
http://onsemi.com  
It features a 128byte page write buffer and supports the Standard  
2
(100 kHz), Fast (400 kHz) and FastPlus (1 MHz) I C protocol.  
Write operations can be inhibited by taking the WP pin High (this  
protects the entire memory).  
External address pins make it possible to address up to eight  
CAT24C512 devices on the same bus.  
SOIC8  
W SUFFIX  
CASE 751BD  
UDFN8  
HU5 SUFFIX  
CASE 517BU  
SOIC8  
X SUFFIX  
CASE 751BE  
Features  
2
Supports Standard, Fast and FastPlus I C Protocol  
1.8 V to 5.5 V Supply Voltage Range  
128Byte Page Write Buffer  
Hardware Write Protection for Entire Memory  
PDIP8  
L SUFFIX  
CASE 646AA CASE 948AL  
TSSOP8  
Y SUFFIX  
2
Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs  
(SCL and SDA)  
Low Power CMOS Technology  
1,000,000 Program/Erase Cycles  
100 Year Data Retention  
Industrial and Extended Temperature Range  
8pin PDIP, SOIC, TSSOP and 8pad UDFN Packages  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
PIN CONFIGURATION  
1
A
A
A
V
0
1
2
CC  
WP  
SCL  
SDA  
V
SS  
PDIP (L), SOIC (W, X),  
TSSOP (Y), UDFN (HU5)  
V
CC  
For the location of Pin 1, please consult the  
corresponding package drawing.  
SCL  
PIN FUNCTION  
CAT24C512  
SDA  
A , A , A  
2
1
0
Pin Name  
Function  
Device Address  
WP  
A , A , A  
0
1
2
SDA  
Serial Data  
Serial Clock  
Write Protect  
Power Supply  
Ground  
SCL  
WP  
V
SS  
Figure 1. Functional Symbol  
V
CC  
V
SS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 15 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
May, 2011 Rev. 1  
CAT24C512/D  

CAT24C512YI-GT3 替代型号

型号 品牌 替代类型 描述 数据表
CAT24C512XI-T2 ONSEMI

完全替代

512 kb I2C CMOS Serial EEPROM 128?Byte Page Write Buffer
CAT24C512WI-GT3 ONSEMI

完全替代

512 kb I2C CMOS Serial EEPROM 128?Byte Page Write Buffer

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