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CAT24C16ZI-GT3 PDF预览

CAT24C16ZI-GT3

更新时间: 2024-11-23 11:52:59
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
16页 168K
描述
1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM

CAT24C16ZI-GT3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-187, MSOP-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.41
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010MMMRJESD-30 代码:S-PDSO-G8
JESD-609代码:e4长度:3 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:1湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX1
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/5 V
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.002 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

CAT24C16ZI-GT3 数据手册

 浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第2页浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第3页浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第4页浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第5页浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第6页浏览型号CAT24C16ZI-GT3的Datasheet PDF文件第7页 
CAT24C01, CAT24C02,  
CAT24C04, CAT24C08,  
CAT24C16  
1-Kb, 2-Kb, 4-Kb, 8-Kb and  
16-Kb I2C CMOS Serial  
EEPROM  
http://onsemi.com  
Description  
The CAT24C01/02/04/08/16 are 1Kb, 2Kb, 4Kb, 8Kb and  
16Kb respectively CMOS Serial EEPROM devices organized  
internally as 8/16/32/64 and 128 pages respectively of 16 bytes each.  
All devices support both the Standard (100 kHz) as well as Fast  
PDIP8  
L SUFFIX  
CASE 646AA  
TSOT23  
TB SUFFIX  
CASE 419AE  
SOIC8  
W SUFFIX  
CASE 751BD  
2
(400 kHz) I C protocol.  
Data is written by providing a starting address, then loading 1 to 16  
contiguous bytes into a Page Write Buffer, and then writing all data to  
nonvolatile memory in one internal write cycle. Data is read by  
providing a starting address and then shifting out data serially while  
automatically incrementing the internal address count.  
External address pins make it possible to address up to eight  
CAT24C01 or CAT24C02, four CAT24C04, two CAT24C08 and one  
CAT24C16 device on the same bus.  
TSSOP8  
Y SUFFIX  
CASE 948AL  
TDFN8  
VP2 SUFFIX  
CASE 511AK  
MSOP 8  
Z SUFFIX  
CASE 846AD  
PIN CONFIGURATIONS  
TSOT23  
Features  
5
SCL  
WP  
1
2
3
2
Supports Standard and Fast I C Protocol  
V
SS  
1.7 V to 5.5 V Supply Voltage Range  
16Byte Page Write Buffer  
4
SDA  
V
CC  
Hardware Write Protection for Entire Memory  
PDIP (L), SOIC (W), TSSOP (Y),  
MSOP (Z), TDFN (VP2)  
2
Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs  
CAT24C__  
16 / 08 / 04 / 02 / 01  
(SCL and SDA)  
Low power CMOS Technology  
1,000,000 Program/Erase Cycles  
V
/
/
/
/
/
/
/
/
NC NC NC  
A
A
A
8
7
6
5
A
0
A
1
A
2
CC  
1
2
3
4
0
1
2
/
/
/
WP  
NC NC  
A
1
A
2
100 Year Data Retention  
/
NC  
SCL  
SDA  
A
2
Industrial and Extended Temperature Range  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
V
SS  
(Top Views)  
PIN FUNCTION  
V
CC  
Pin Name  
Function  
A0, A1, A2  
Device Address Input  
SDA  
SCL  
WP  
Serial Data Input/Output  
Serial Clock Input  
Write Protect Input  
Power Supply  
SCL  
A , A , A  
CAT24Cxx  
SDA  
2
1
0
V
CC  
WP  
V
SS  
Ground  
NC  
No Connect  
V
SS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 15 of this data sheet.  
Figure 1. Functional Symbol  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
March, 2010 Rev. 11  
CAT24C01/D  

CAT24C16ZI-GT3 替代型号

型号 品牌 替代类型 描述 数据表
BR24L16FVM-WTR ROHM

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