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CAT24C03TDI-GT3 PDF预览

CAT24C03TDI-GT3

更新时间: 2024-01-01 20:44:59
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
14页 159K
描述
2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection

CAT24C03TDI-GT3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOT
包装说明:ROHS COMPLIANT, MO-193, TSOT-23, 5 PIN针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.48
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010000RJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:5
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.001 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1.6 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

CAT24C03TDI-GT3 数据手册

 浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第2页浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第3页浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第4页浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第5页浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第6页浏览型号CAT24C03TDI-GT3的Datasheet PDF文件第7页 
CAT24C03, CAT24C05  
2-Kb and 4-Kb I2C Serial  
EEPROM with Partial Array  
Write Protection  
Description  
http://onsemi.com  
The CAT24C03/05 is a 2Kb/4Kb CMOS Serial EEPROM device  
organized internally as 16/32 pages of 16 bytes each, for a total of  
256x8/512x8 bits. These devices support both Standard (100 kHz) as  
2
well as Fast (400 kHz) I C protocol.  
Data is written by providing a starting address, then loading 1 to 16  
contiguous bytes into a Page Write Buffer, and then writing all data to  
nonvolatile memory in one internal write cycle. Data is read by  
providing a starting address and then shifting out data serially while  
automatically incrementing the internal address count.  
PDIP8  
L SUFFIX  
CASE 646AA  
TSOT23  
TD SUFFIX  
CASE 419AE  
SOIC8  
W SUFFIX  
CASE 751BD  
Write operations can be inhibited for upper half of memory by  
taking the WP pin High.  
External address pins make it possible to address up to eight  
CAT24C03 or four CAT24C05 devices on the same bus.  
TSSOP8  
Y SUFFIX  
CASE 948AL  
TDFN8  
VP2 SUFFIX  
CASE 511AK  
Features  
PIN CONFIGURATIONS  
2
Supports Standard and Fast I C Protocol  
TSOT23 (TD)  
1.8 V to 5.5 V Supply Voltage Range  
16Byte Page Write Buffer  
5
4
SCL  
WP  
1
2
3
V
SS  
Hardware Write Protection for Upper Half of Memory  
2
SDA  
V
CC  
Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs  
(SCL and SDA)  
PDIP (L), SOIC (W),  
TSSOP (Y), TDFN (VP2)  
Low Power CMOS Technology  
1,000,000 Program/Erase Cycles  
100 Year Data Retention  
Industrial Temperature Range  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
CAT24C05/03  
NC/A  
V
CC  
8
7
6
5
0
1
2
3
4
A /A  
WP  
1
1
2
A /A  
SCL  
SDA  
2
V
SS  
(Top Views)  
V
CC  
PIN FUNCTION  
Pin Name  
Function  
SCL  
A0, A1, A2  
Device Address Inputs  
Serial Data Input/Output  
Serial Clock Input  
Write Protect Input  
Power Supply  
CAT24C03  
CAT24C05  
SDA  
SCL  
WP  
A , A , A  
SDA  
2
1
0
WP  
V
CC  
V
Ground  
SS  
V
SS  
NC  
No Connect  
Figure 1. Functional Symbol  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 14 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 3  
CAT24C03/D  

CAT24C03TDI-GT3 替代型号

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CAT24AA02TDI-GT3 ONSEMI

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