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2N5911X PDF预览

2N5911X

更新时间: 2024-02-15 05:13:54
品牌 Logo 应用领域
CALOGIC 放大器
页数 文件大小 规格书
2页 29K
描述
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, DIE

2N5911X 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-N7Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.90.00.00
风险等级:5.75其他特性:LOW NOISE
配置:SEPARATE, 2 ELEMENTSFET 技术:JUNCTION
最大反馈电容 (Crss):1.2 pFJESD-30 代码:R-XUUC-N7
元件数量:2端子数量:7
工作模式:DEPLETION MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N5911X 数据手册

 浏览型号2N5911X的Datasheet PDF文件第2页 
Dual N-Channel JFET  
High Frequency Amplifier  
CORPORATION  
2N5911 / 2N5912  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise specified)  
Tight Tracking  
Low Insertion Loss  
Good Matching  
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
PIN CONFIGURATION  
One Side  
367mW  
Both Sides  
500mW  
Power Dissipation  
Derate above 25oC  
3.0mW/oC  
4.0mW/oC  
TO-99  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
ORDERING INFORMATION  
Part  
2N5911-12 Hermetic TO-99  
X2N5912 Sorted Chips in Carriers  
Package  
Temperature Range  
G2  
D2  
S2  
C
S1  
-55oC to +150oC  
G1  
D1  
CJ1  
-55oC to +150oC  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
SYMBOL  
PARAMETER  
MIN  
MAX  
-100  
-250  
UNITS  
pA  
TEST CONDITIONS  
GS = -15V, VDS = 0  
V
IGSS  
Gate Reverse Current  
nA  
TA = 150oC  
BVGSS  
VGS(off)  
VGS  
Gate Reverse Breakdown Voltage  
Gate-Source Cutoff Voltage  
Gate-Source Voltage  
IG = -1µA, VDS = 0  
-25  
-1  
V
-5  
-4  
VDS = 10V, ID = 1nA  
-0.3  
VDG = 10V, ID = 5mA  
VDS = 10V, VGS = 0V  
-100  
-100  
40  
pA  
nA  
mA  
IG  
Gate Operating Current  
TA = 150oC  
IDSS  
gfs  
Saturation Drain Current (Pulsewidth 300µs, duty cycle 3%)  
Common-Source Forward Transconductance  
7
5000  
5000  
10,000  
10,000  
100  
150  
5
f = 1kHz  
gfs  
Common-Source Forward Transconductance (Note 1)  
Common-Source Output Conductance  
f = 100MHz  
f = 1kHz  
µS  
gos  
goss  
Ciss  
Crss  
Common-Source Output Conductance (Note 1)  
Common-Source Input Capacitance (Note 1)  
f = 100MHz  
VDG = 10V, ID = 5mA  
f = 1MHz  
pF  
Common-Source Reverse Transfer Capacitance (Note 1)  
1.2  
nV  
Hz  
en  
Equivalent Short Circuit Input Noise Voltage (Note 1)  
Spot Noise Figure (Note 1)  
f = 10kHz  
f = 10kHz  
20  
1
NF  
dB  
R
G = 100kΩ  

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