5秒后页面跳转
2N5114 PDF预览

2N5114

更新时间: 2024-02-29 14:35:14
品牌 Logo 应用领域
CALOGIC 晶体开关小信号场效应晶体管
页数 文件大小 规格书
2页 37K
描述
P-Channel JFET Switch

2N5114 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

2N5114 数据手册

 浏览型号2N5114的Datasheet PDF文件第2页 
P-Channel JFET Switch  
CORPORATION  
2N5114 – 2N5116  
GENERAL DESCRIPTION  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise noted)  
Ideal for inverting switching or "Virtual Gnd" switching into  
inverting input of Op. Amp. No driver is required and ±10VAC  
signals can be handled using only +5V logic (TTL or CMOS).  
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +200oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
FEATURES  
Low ON Resistance  
ID(off)<500pA  
Switches directly from TTL Logic  
PIN CONFIGURATION  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
TO-18  
2N5114-16 Hermetic TO-18  
X2N5114-16 Sorted Chips in Carriers  
-55oC to +200oC  
-55oC to +200oC  
D
S
G,C  
5508  
SWITCHING CHARACTERISTICS (TA = 25oC unless otherwise specified)  
2N5114  
2N5115  
MAX  
10  
2N5116  
MAX  
12  
SYMBOL  
PARAMETER  
Turn-ON Delay Time  
UNITS  
MAX  
td  
tr  
6
Rise Time (Note 2)  
10  
6
20  
8
30  
10  
50  
ns  
toff  
tf  
Turn-OFF Delay Time (Note 2)  
Fall Time (Note 2)  
15  
30  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
2N5114  
2N5115  
2N5116  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN  
30  
MAX  
MIN  
30  
MAX  
MIN  
MAX  
BVGSS  
Gate-Source Breakdown Voltage  
30  
V
IG = 1µA, VDS = 0  
500  
1.0  
500  
1.0  
500  
1.0  
pA  
µA  
pA  
V
GS = 20V, VDS = 0  
IGSS  
Gate Reverse Current  
TA 150oC  
-500  
-500  
-500  
V
V
V
V
DS = -15V  
GS = 12V (2N5114)  
GS = 7V (2N5115)  
GS = 5V (2N5116)  
ID(off)  
Drain Cutoff Current  
-1.0  
10  
-1.0  
6
-1.0  
4
µA  
VP  
Gate-Source Pinch-Off Voltage  
5
3
1
V
VDS = -15V, ID = -1nA  

与2N5114相关器件

型号 品牌 描述 获取价格 数据表
2N5114_08 MICROSEMI P-CHANNEL J-FET

获取价格

2N5114_TO-18 MICROSS P-CHANNEL JFET

获取价格

2N5114-16 CALOGIC P-Channel JFET Switch

获取价格

2N5114HR DIGITRON Small Signal Field-Effect Transistor

获取价格

2N5114HR-PBF DIGITRON Small Signal Field-Effect Transistor

获取价格

2N5114JAN VISHAY P-Channel JFETs

获取价格