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2N4338

更新时间: 2024-02-19 22:26:55
品牌 Logo 应用领域
CALOGIC 晶体放大器小信号场效应晶体管开关
页数 文件大小 规格书
1页 23K
描述
N-Channel JFET Low Noise Amplifier

2N4338 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.17
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:50 VFET 技术:JUNCTION
最大反馈电容 (Crss):2 pFJEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N4338 数据手册

  
N-Channel JFET  
Low Noise Amplifier  
CORPORATION  
2N4338 – 2N4341  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise noted)  
Exceptionally High Figure of Merit  
Radiation Immunity  
Extremely Low Noise and Capacitance  
High Input Impedance  
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +175oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
APPLICATIONS  
Low-level Choppers  
Data Switches  
Multiplexers and Low Noise Amplifiers  
PIN CONFIGURATION  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
-55oC to +175oC  
TO-18  
2N4338-41  
Hermetic TO-18  
X2N4338-41 Sorted Chips in Carriers -55oC to +175oC  
G,C  
S
D
5010  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
2N4338  
2N4339  
2N4340  
2N4341  
SYMBOL  
PARAMETER  
Gate Reverse Current  
UNITS  
TEST CONDITIONS  
MIN MAX MIN MAX MIN MAX MIN MAX  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
nA  
IGSS  
VGS = -30V, VDS = 0  
TA = 150oC  
µA  
BVGSS  
VGS(off)  
Gate-Source Breakdown Voltage  
Gate-Source Cutoff Voltage  
-50  
-50  
-50  
-1  
-50  
-2  
IG = -1µA, VDS = 0  
V
-0.3  
-1  
-0.6 -1.8  
-3  
-6  
VDS = 15V, ID = 0.1µA  
0.05  
(-5)  
0.05  
(-5)  
0.05  
(-5)  
0.07  
(-10) (V)  
nA  
V
DS = 15V,  
ID(off)  
IDSS  
gfs  
Drain Cutoff Current  
VGS = ( )  
Saturation Drain Current (Note 2)  
0.2 0.6 0.5 1.5 1.2 3.6  
3
9
mA  
VDS = 15V, VGS = 0  
Common-Source Forward  
Transconductance (Note 2)  
600 1800 800 2400 1300 3000 2000 4000  
V
DS = 15V,  
GS = 0  
µS  
V
f = 1kHz  
gos  
Common-Source Output Conductance  
Drain-Source ON Resistance  
5
2500  
7
15  
1700  
7
30  
1500  
7
60  
rDS(on)  
Ciss  
800 ohm VDS = 0, IDS = 0  
7
Common-Source Input Capacitance  
V
DS = 15V,  
pF  
f = 1MHz  
f = 1kHz  
Common-Source Reverse Transfer  
Capacitance  
VGS = 0 (Note 1)  
Crss  
3
3
3
3
VDS = 15V,  
VGS = 0  
Rgen = 1meg,  
BW = 200Hz  
NF  
Noise Figure (Note 1)  
1
1
1
1
dB  
NOTES: 1. For design reference only, not 100% tested.  
2. Pulse test duration 2ms (non-JEDEC Condition).  

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