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C5D25170H PDF预览

C5D25170H

更新时间: 2022-02-26 14:33:54
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 612K
描述
Silicon Carbide Schottky Diode

C5D25170H 数据手册

 浏览型号C5D25170H的Datasheet PDF文件第2页浏览型号C5D25170H的Datasheet PDF文件第3页浏览型号C5D25170H的Datasheet PDF文件第4页浏览型号C5D25170H的Datasheet PDF文件第5页浏览型号C5D25170H的Datasheet PDF文件第6页 
C5D25170H  
VRRM  
=
1700 V  
33.6 A  
Silicon Carbide Schottky Diode  
IF,(TC=135˚C) =  
®
Z-Rec Rectifierꢀ ꢀ ꢀ ꢀ  
Qcꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢁꢀ=ꢀꢀꢀꢀꢀꢀꢀ255ꢀnC  
Features  
Package  
1.7kV Schottky Rectifier  
Zero Reverse Recovery Current  
High-Frequency Operation  
Temperature-Independent Switching  
Extremely Fast Switching  
Positive Temperature Coefficient on VF  
TO-247-2  
Benefits  
Replace Bipolar with Unipolar Rectifiers  
Essentially No Switching Losses  
Higher Efficiency  
Reduction of Heat Sink Requirements  
Parallel Devices Without Thermal Runaway  
PIN 1  
PIN 2  
CASE  
Applications  
Switch Mode Power Supplies (SMPS)  
Boost diodes in PFC or DC/DC stages  
Free Wheeling Diodes in Inverter stages  
1500V Solar Inverter  
Part Number  
Package  
Marking  
C5D25170H  
TO-247-2  
C5D25170  
Maximum Ratings (TC=25°C unless otherwise specified)  
Symbol  
Parameter  
Value Unit  
Test Conditions  
Note  
VRRM  
Repetitive Peak Reverse Voltage  
DC Peak Reverse Voltage  
1700  
1700  
V
V
VR  
70  
33.6  
25.6  
TC=25˚C  
TC=135˚C  
TC=150˚C  
IF  
Continuous Forward Current  
A
Fig. 3  
99  
57  
TC=25˚C, tP=10 ms, Half Sine Pulse  
TC=110˚C, tP=10 ms, Half Sine Pulse  
IFRM  
Repetitive Peak Forward Surge Current  
Non-Repetitive Forward Surge Current  
Power Dissipation  
A
A
117  
88  
TC=25˚C, tP=10 ms, Half Sine Pulse  
TC=110˚C, tP=10 ms, Half Sine Pulse  
IFSM  
384  
167  
TC=25˚C  
TC=110˚C  
Ptot  
W
Fig. 4  
-55 to  
+175  
TJ , Tstg  
Operating Junction and Storage Temperature  
TO-247 Mounting Torque  
˚C  
1
Nm  
M3 Screw  
8.8  
lbf-in 6-32 Screw  
1
C5D25170H Rev. 0, 12-2018  

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