Datasheet > C3M0021120D

C3M0021120D

更新时间： 2024-10-29 01:24:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	807K
描述
Silicon Carbide Power MOSFET C3MTM MOSFET Technology

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中文翻译

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数据手册

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C3M0021120D 数据手册

V_DS

I_D

R_DS(on)

1200 V

100 A

25˚C

C3M0021120D

21 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•

3rd generation SiC MOSFET technology

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Q_rr)

Halogen free, RoHS compliant

Beneﬁts

•

Reduce switching losses and minimize gate ringing

Higher system efﬁciency

Reduce cooling requirements

Increase power density

Increase system switching frequency

Applications

•

Solar inverters

EV motor drive

High voltage DC/DC converters

Switched mode power supplies

Load switch

Marking

Part Number

Package

C3M0021120D

TO 247-3

C3M0021120D

Maximum Ratings (T_C= 25 ˚C unless otherwise speciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_D= 100 μA

1200

-8/+19

-4/+15

100

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

AC (f >1 Hz)

Static

Note 1

Note 2

Fig. 19

V_GS= 15 V, T_C= 25˚C

V_GS= 15 V, T_C= 100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

200

469

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

Power Dissipation

˚C

T_C=25˚C, T = 175 ˚C

Fig. 20

-40 to

+175

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mm (0.063”) from case for 10s

M3 or 6-32 screw

T_L

8.8

lbf-in

Mounting Torque

M_d

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0021120D Rev. -, 08-2019

12 3 4 5 6 7...10

中文翻译

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