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C35B PDF预览

C35B

更新时间: 2024-09-26 14:51:03
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
2页 28K
描述
Cell Diodes

C35B 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:O-XXSS-X2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.08 V
JESD-30 代码:O-XXSS-X2JESD-609代码:e4
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:35 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:SPECIAL SHAPE
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO端子面层:SILVER
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
Base Number Matches:1

C35B 数据手册

 浏览型号C35B的Datasheet PDF文件第2页 
®
C35A – C35K  
35A AUTOMOTIVE CELL DIODE  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Die Size 184 mil HEX  
D
Anode +  
C
E
Mechanical Data  
B
A
C35  
Dim  
A
Min  
Max  
6.40  
5.46  
Case: Cell Diode Passivated with Silicon Rubber  
Terminal: Copper Disc with Ag Plated  
Polarity: Indicated by Large Disc On Cathode  
Side, Add “R” Suffix to Indicate Reverse Polarity,  
i.e. C35AR  
B
C
0.75  
1.0  
D
E
2.2  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
C35A  
50  
C35B  
100  
70  
C35D  
200  
C35G  
400  
C35J  
600  
C35K  
800  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
140  
280  
420  
560  
V
A
Average Rectified Output Current  
@TC = 150°C  
35  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
400  
A
Forward Voltage  
@IF = 80A  
VFM  
IRM  
1.08  
3.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
µA  
@TA = 25°C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
RθJA  
1.4  
°C/W  
°C  
TJ, TSTG  
-40 to +150  
© Won-Top Electronics Co., Ltd.  
Revision: April, 2012  
www.wontop.com  
1

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