Datasheet > C3225X7R1H225K

C3225X7R1H225K

更新时间： 2024-11-26 12:51:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
20页	1270K
描述
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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C3225X7R1H225K 数据手册

Document Number: MRFE6VP8600H

Rev. 1, 9/2011

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MRFE6VP8600HR6

MRFE6VP8600HR5

MRFE6VP8600HSR6

MRFE6VP8600HSR5

Enhancement--Mode Lateral MOSFETs

Optimized for broadband operation from 470 to 860 MHz. Device has an

integrated input matching network for better power distribution. These devices

are ideally suited for use in analog or digital television transmitters.

•

Typical Narrowband Performance: V_DD= 50 Volts, I_DQ= 1400 mA,

Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @

±4 MHz Offset with an Integration Bandwidth of 4 kHz.

470--860 MHz, 600 W, 50 V

LDMOS BROADBAND

RF POWER TRANSISTORS

(W)

(%)

ACPR

(dBc)

IRL

(dB)

out

Signal Type

(MHz) (dB)

DVB--T (8k OFDM)

125 Avg.

860 19.3

30.0

--60.5

-- 1 2

•

Typical Pulsed Broadband Performance: V_DD= 50 Volts, I_DQ= 1400 mA,

Pulsed Width = 100 μsec, Duty Cycle = 10%

(W)

out

Signal Type

(MHz)

(dB)

19.3

20.0

18.8

(%)

47.1

53.1

48.9

CASE 375D--05, STYLE 1

NI--1230

Pulsed

600 Peak

470

650

860

MRFE6VP8600HR6

Features

•

Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,

860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input

Overdrive from Rated P_out

)

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP8600HSR6

•

Exceptional Efficiency for Class AB Analog or Digital Television Operation

Full Performance across Complete UHF TV Spectrum, 470--860 MHz

Capable of 600 Watt CW Output Power with Adequate Thermal Management

Integrated Input Matching

Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V

− Improves Class C Performance, e.g. in a Doherty Peaking Stage

PARTS ARE PUSH--PULL

− Enables Fast, Easy and Complete Shutdown of the Amplifier

•

Characterized from 20 V to 50 V for Extended Operating Range for use

with Drain Modulation

Excellent Thermal Characteristics

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Gate 1

Gate 2

Drain 1

Drain 2

•

Table 1. Maximum Ratings

Rating

(Top View)

Symbol

Value

Unit

Note: The backside of the package is the

source terminal for the transistor.

Drain--Source Voltage

--0.5, +130

--6.0, +10

--65 to +150

150

Vdc

°C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Figure 1. Pin Connections

stg

°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1052

5.26

W/°C

(1,2)

Operating Junction Temperature

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software &

Tools/Development Tools/Calculators to access MTTF calculators by product.

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

中文翻译

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与C3225X7R1H225K相关器件

型号	品牌	获取价格	描述	数据表
C3225X7R1H225K/2.50	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% -Tol, X7R, 15% TC, 2.2uF, Surface Mount,
C3225X7R1H225K200AB	TDK	获取价格	CAP CER 2.2UF 50V X7R 1210
C3225X7R1H225K200AB_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C3225X7R1H225K200AE	TDK	获取价格	CAP CER 2.2UF 50V X7R 1210
C3225X7R1H225K250AB	TDK	获取价格	Commercial Grade ( General (Up to 50V) )
C3225X7R1H225KT/2.00	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% +Tol, 10% -Tol, X7R, 15% TC, 2.2uF, Surfa
C3225X7R1H225M	TDK	获取价格	Ceramic Capacitor, Ceramic,
C3225X7R1H225M200AB	TDK	获取价格	CAP CER 2.2UF 50V X7R 1210
C3225X7R1H225M200AB_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C3225X7R1H225M200AE	TDK	获取价格	CAP CER 2.2UF 50V X7R 1210

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