Datasheet > C3225CH2A153JT

C3225CH2A153JT

更新时间： 2024-09-23 12:54:43

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
15页	822K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

C3225CH2A153JT 数据手册

Document Number: MRF6V4300N

Rev. 3, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V4300NR1

MRF6V4300NBR1

Designed primarily for CW large--signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance: V_DD= 50 Volts, I_DQ= 900 mA, P_out= 300 Watts,

f = 450 MHz

Power Gain — 22 dB

Drain Efficiency — 60%

10--600 MHz, 300 W, 50 V

LATERAL N--CHANNEL

SINGLE--ENDED

BROADBAND

RF POWER MOSFETs

Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

PLASTIC

MRF6V4300NR1

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

PLASTIC

MRF6V4300NBR1

PARTS ARE SINGLE--ENDED

RF /V

in GS

RF /V

out DS

RF /V

in GS

RF /V

out DS

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

下载PDF

与C3225CH2A153JT相关器件

型号	品牌	获取价格	描述	数据表
C3225CH2A153K125AA	TDK	获取价格	CAP CER 0.015UF 100V CH 1210
C3225CH2A153K125AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C3225CH2A223J160AA	TDK	获取价格	CAP CER 0.022UF 100V CH 1210
C3225CH2A223J160AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C3225CH2A223K160AA	TDK	获取价格	CAP CER 0.022UF 100V CH 1210
C3225CH2A223K160AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C3225CH2A333J200AA	TDK	获取价格	CAP CER 0.033UF 100V CH 1210
C3225CH2A333K200AA	TDK	获取价格	CAP CER 0.033UF 100V CH 1210
C3225CH2A473J230AA	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, CH, 60ppm/Cel TC, 0.047uF,
C3225CH2A473J230AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors