Datasheet > C3039

C3039

更新时间： 2024-11-27 21:54:31

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	65K
描述
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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C3039 数据手册

Silicon Epitaxial Planar Transistor

2SC3039

GENERAL DESCRIPTION

Silicon NPN high frequency, high power transistors

in a plastic envelope, primarily for use in audio and

general purpose

TO-220

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

I_CM

P_tot

V_CEsat

V_F

t_f

PARAMETER

CONDITIONS

TYP

MAX

500

300

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

T_mb25

I_C= 3.0A; I_B= 0.3A

I_F= 3.0A

1.5

2.0

1.0

Fall time

I_C=3A,I_B1=-I_B2=0.3A,V_CC=60V

0.4

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

I_B

P_tot

T_stg

T_j

PARAMETER

CONDITIONS

MIN

MAX

500

300

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

Total power dissipation

Storage temperature

Tmb 25

-55

150

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

0.2

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

V_CB=400V

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

C_c

t_on

t_s

t_f

V_EB=5V

0.2

I_C=1mA

300

I_C= 2.0A; I_B= 0.5A

I_C= 0.8A; V_CE= 5V

I_C= 1A; V_CE= 12V

V_CB= 10V

100

120

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

I_C=3A,I_B1=-I_B2=0.3A,V_CC=60V

1.0

2.5

1.0

Tum-off storage time

Fall time

0.4

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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