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C2611-TO-251 PDF预览

C2611-TO-251

更新时间: 2024-11-08 09:47:47
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
3页 185K
描述
TRANSISTOR( NPN )

C2611-TO-251 数据手册

 浏览型号C2611-TO-251的Datasheet PDF文件第2页浏览型号C2611-TO-251的Datasheet PDF文件第3页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD  
TO-251 Plastic-Encapsulate Transistors  
C 2611  
TRANSISTORNPN )  
TO251  
FEATURES  
Power dissipation  
PCM : 1  
Collector current  
ICM : 0.2  
WTamb=25℃)  
1. EMITTER  
A
2.COLLECTOR  
Collector-base voltage  
V(BR)CBO : 600  
3.BASE  
V
Operating and storage junction temperature range  
1
2
3
TJTstg: -55to +150℃  
ELECTRICAL  
CHARACTERISTICS Tamb=25 ℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
600  
400  
7
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= 100μA IE=0  
IC= 1 mA , IB=0  
V
IE= 100 μAIC=0  
VCB= 600 V , IE=0  
VCE= 400 V , IB=0  
VEB= 7 V , IC=0  
VCE= 20 V, IC= 20mA  
VCE= 10V, IC= 0.25 mA  
IC= 50mA, IB= 10 mA  
IC= 50 mA, IB= 10mA  
V
100  
200  
100  
40  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
hFE1)  
10  
5
DC current gain  
hFE2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
0.5  
1.2  
V
V
VCE= 20 V, I =20mA  
C
Transition frequency  
8
MHz  
f
T
f = 1MHz  
IC=50mA,  
Fall time  
0.3  
1.5  
μs  
μs  
t
f
IB1=-IB2=5mA,  
Storage time  
t S  
VCC=45V  
CLASSIFICATION OF hFE(1)  
Rank  
Range  
10-15  
15-20  
20-25  
25-30  
30-35  
35-40  

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