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C20U60CTG PDF预览

C20U60CTG

更新时间： 2024-09-24 01:20:03
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
3页 477K
描述
20A High Power Trench Schottky Barrier Rectifier

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中文翻译

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C20U60CTG 数据手册

 浏览型号C20U60CTG的Datasheet PDF文件第2页浏览型号C20U60CTG的Datasheet PDF文件第3页 
C20U60CT  
20A High Power Trench Schottky Barrier Rectifier  
Chip Integration Technology Corporation  
Main Product Characteristics  
■Outline  
Dimensions in inches(millimeters)  
TO-220AB  
K
symbol  
Min  
Max  
IF(AV)  
VRRM  
TJ  
2 X 10A  
60V  
150OC  
L
ØP  
A
A
B
0.398(10.1)  
0.236(6.0)  
0.579(14.7)  
0.543(13.8)  
0.143(3.63)  
0.104(2.64)  
0.335(8.5)  
0.046(1.17)  
0.028(0.71)  
0.098(2.49)  
0.176(4.47)  
0.046(1.17)  
0.102(2.6)  
0.019(0.28)  
0.147(3.74)  
0.406(10.3)  
0.252(6.4)  
0.594(15.1)  
0.551(14.0)  
0.159(4.03)  
0.112(2.84)  
0.350(8.9)  
0.054(1.37)  
0.036(0.91)  
0.102(2.59)  
0.184(4.67)  
0.054(1.37)  
0.110(2.8)  
0.021(0.48)  
0.155(3.94)  
F
C
D
E
B
C
Marking code  
F
VF(Typ)  
0.45V  
G
G
H
I
1
2
3
C
M
H
E
J
■ Features  
I
K
D
L
M
N
ØP  
• Low forward voltage drop.  
• Excellent high temperature stability.  
• Fast switching capability.  
• Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
J
N
Alternate  
Dimensions in inches(millimeters)  
K
symbol  
Min  
0.394(10.0)  
0.228(5.8)  
Max  
0.413(10.5)  
0.268(6.8)  
L
ØP  
A
A
B
F
C
D
E
0.570(14.48) 0.625(15.87)  
0.519(13.18) 0.558(14.18)  
B
C
0.089(3.5)  
0.100(2.54)  
0.330(8.38)  
0.045(1.15)  
0.029(0.75)  
0.095(2.42)  
0.160(4.07)  
0.045(1.15)  
0.080(2.04)  
0.013(0.33)  
0.148(3.75)  
0.099(3.9)  
0.120(3.04)  
0.350(8.9)  
0.060(1.52)  
0.037(0.95)  
0.105(2.66)  
0.190(4.82)  
0.055(1.39)  
0.110(2.8)  
■ Mechanical Data  
Marking code  
F
G
G
H
I
1
2
3
• Epoxy : UL94-V0 rated flame retardant.  
• Case : JEDEC ITO-220AB molded plastic body.  
• Terminals : Solder plated, solderable per  
MIL-STD-750, Method 202. 6  
M
H
E
J
I
K
D
L
M
N
ØP  
0.019(0.52)  
0.156(3.95)  
• Polarity: As marked.  
J
N
• Weight : Approximated 2.25 gram.  
Dimensions in inches and (millimeters)  
■ Circuit Diagram  
■ Maximum Ratings  
Rating at 25OC ambient temperature unless otherwise specified.  
Parameter  
Condition  
Symbol  
VRWM  
IO  
UNIT  
V
C20U60CT  
60  
Working Peak Reverse Voltage  
Forward Rectified Current (total device)  
20  
A
A
8.3ms single half sine-wave  
superimposed on rate load (JEDEC method)  
Forward Surge Current (per diode)  
IFSM  
200  
Pulse width 2us, 1000Hz, square wave  
IRRM  
(per diode)  
Peak Repetitive Reverse Surge Current  
2
A
at TA 25oC,10 cycles  
RθJC  
RθJA  
TSTG  
TJ  
Junction to case  
2
OC/W  
Thermal Resistance (per diode)  
Junction to ambient  
50  
OC  
OC  
Storage Temperature  
-55 ~ +150  
-55 ~ +150  
Operating Junction Temperature  
■ Electrical Characteristics  
Rating at 25OC ambient temperature unless otherwise specified.  
Parameter  
Condition  
IF = 3A, TJ = 25OC  
IF = 10A, T J = 25OC  
IF = 10A, T J = 125OC  
Symbol  
VF  
MIN.  
TYP.  
MAX.  
UNIT  
mV  
410  
Forward Voltage Drop (per diode)  
500  
450  
560  
VR = VRWM , TJ = 25OC  
VR = VRWM , TJ = 125OC  
IR = 0.1mA, TJ = 25OC  
0.011  
0.1  
40  
IR  
Reverse Current (per diode)  
mA  
V
VBR  
60  
Reverse Breakdown Voltage (per diode)  
Document ID : DS-11KIK  
Revised Date : 2016/05/31  
Revision : C  
1
123

中文翻译

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