Datasheet > C2012X7R2A103M

C2012X7R2A103M

更新时间： 2024-09-27 12:50:55

品牌	Logo	应用领域
威讯 - RFMD		脉冲
页数	文件大小	规格书
11页	923K
描述
280W GaN WIDEBAND PULSED POWER

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C2012X7R2A103M 数据手册

RF3928280W

GaN WIDE-

BAND PULSED

POWER AMPLI-

FIER

RF3928

280W GaN WIDEBAND PULSED POWER

AMPLIFIER

Package: Hermetic 2-Pin, Flanged Ceramic

Features

 Wideband Operation 2.8GHz to

3.4GHz

RF IN

Pin 1 (CUT)

RF OUT

Pin 2

 Advanced GaN HEMT Technology

 Advanced Heat-Sink Technology

 Supports Multiple Pulse

Conditions

GND

BASE

 10% to 20% Duty Cycle

 100s to 500s Pulse Width

 Integrated Matching

Components for High Terminal

Impedances

Functional Block Diagram

 50V Operation Typical

Performance

Product Description

 Pulsed Output Power 280W

 Small Signal Gain 12dB

 Drain Efficiency 52%

 -40°C to 85°C Operating

Temperature

The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band

pulsed radar, Air Traffic Control and Surveillance and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high-performance amplifiers achieve high output

power, high efficiency and flat gain over a broad frequency range in a single pack-

age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged

ceramic package. This package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of simple, optimized matching networks

external to the package that provide wide band gain and power performance in a

single amplifier.

Applications

 Radar

 Air Traffic Control and

Surveillance

 General Purpose Broadband

Amplifiers

Ordering Information

RF3928S2

2-Piece sample bag

RF3928SB

5-Piece bag

RF3928SQ

RF3928SR

RF3928TR13

RF3928PCBA-410

25-Piece bag

50 Pieces on 7” short reel

250 Pieces on 13” reel

Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V

operation

Optimum Technology Matching^®Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120508

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与C2012X7R2A103M相关器件

型号	品牌	获取价格	描述	数据表
C2012X7R2A103M085AA	TDK	获取价格	CAP CER 10000PF 100V X7R 0805
C2012X7R2A103M085AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C2012X7R2A103M085AE	TDK	获取价格	CAP CER 10000PF 100V X7R 0805
C2012X7R2A103MB	TDK	获取价格	暂无描述
C2012X7R2A103MT	TDK	获取价格	暂无描述
C2012X7R2A104K	TDK	获取价格	Multilayer Ceramic Chip Capacitors General use(Mid voltage)
C2012X7R2A104K125AA	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.1uF, Surf
C2012X7R2A104K125AA_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors
C2012X7R2A104K125AE	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, X7R, -/+15ppm/Cel TC, 0.1uF, 0805
C2012X7R2A104K125AE_17	TDK	获取价格	Multilayer Ceramic Chip Capacitors

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