Datasheet > C1815O

C1815O

更新时间： 2024-02-02 10:52:36

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	110K
描述
Transistor

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中文翻译

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技术参数
数据手册

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C1815O 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.59	Base Number Matches：	1

C1815O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

C1815 TRANSISTOR (NPN)

TO—92

1.EMITTER

2.COLLECTOR

3.BASE

FEATURES

Power dissipation

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

1 2 3

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

150

400

-55-150

P_D

Total Device Dissipation

T_J, T_stg

Junction and Storage Temperature

℃

*These ratings are limiting values above which the serviceability

of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Ic= 100 uA, I_E=0

Ic= 0. 1 mA, I_B=0

I_E= 100 uA, I_C=0

V_CB= 60 V , I_E=0

V_CE= 50 V , I_B=0

0.1

700

0.25

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB

V, I_C=0

DC current gain

h_FE(1)

V_CE

V, I_C= 2mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C= 100mA, I_B= 10 mA

I_C= 100 mA, I_B= 10mA

V_CE= 10 V, I_C= 1mA

f=30MHz

MHz

VCB=10V,IE=0

f=1MHZ

V_CE= 6 V, I_C=0.1 mA

f =1KHz,RG=10K

Collector Output Capacitance

Noise Figure

Cob

3.5

CLASSIFICATION OF h_FE(1)

Rank

200-400

350-700

Range

70-140

120-240

中文翻译

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