Datasheet > C1815LT1H

C1815LT1H

更新时间： 2024-09-25 19:44:43

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WEITRON		/
页数	文件大小	规格书
2页	206K
描述
Small Signal Bipolar Transistor

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中文翻译

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技术参数
数据手册

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C1815LT1H 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.44
Base Number Matches：	1

C1815LT1H 数据手册

C1815LT1

TRANSISTOR(NPN)

COLLECTOR

P b

Lead(Pb)-Free

BASE

FEATURES

Power dissipation

SOT-23

EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

mitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

200

150

-55-150

℃

P_C

T_j

T_stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Paramet er

Symbol

V_(BR)CBO

V_(BR)CEO

I_CBO

Test conditions

I_C= 100uA, I_E=0

I_C= 0.1mA, I_B=0

V_CB=60V, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

0.1

400

0.25

Collector cut-off current

I_CEO

V_CE=50V, I_B=0

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

DC current gain

h_FE

V_CE= 6V, I_C= 2mA

I_C=100mA, I_B= 10mA

130

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=10V, I_C= 1mA,

Transition frequency

f_T

MHz

f=30MHz

CLASSIFICATION OF h _FE

Rank

Range

130-200

200-400

Device Marking

C1815LT1 = HF

WEITRON

http://www.weitron.com.tw

23-Oct-2013

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