C1815H PDF预览

C1815H

更新时间: 2025-07-14 20:08:43
品牌 Logo 应用领域
RECTRON 光电二极管晶体管
页数 文件大小 规格书
2页 450K
描述
Small Signal Bipolar Transistor, 0.00015A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

C1815H 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.69最大集电极电流 (IC):0.00015 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

C1815H 数据手册

 浏览型号C1815H的Datasheet PDF文件第2页 
C1815  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(NPN)  
FEATURES  
* Power dissipation  
PCM :  
0.2  
0.15  
60  
W (Tamb=25OC)  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
mA  
V
:
V
(BR)CBO  
SOT-23  
Operating and storage junction temperature range  
TJ,Tstg: -55OC to +150OC  
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
O
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )  
TYP  
CHARACTERISTICS  
SYMBOL  
MIN  
60  
MAX  
-
UNITS  
V
Collector-base breakdown voltage (I = 100µA, I =0)  
(BR)CBO  
(BR)CEO  
-
-
-
-
-
V
C
E
V
-
Collector-emitter breakdown voltage (I = 0.1mA, I =0)  
50  
-
V
C
B
I
0.1  
0.1  
0.1  
Collector cut-off current (V = 60V, I =0)  
CBO  
µA  
µA  
CB  
E
I
-
Collector cut-off current (V = 50V, I =0)  
CEO  
CB  
B
-
I
Emitter cut-off current (V = 5V, I =0)  
EBO  
µA  
EB  
C
-
-
-
-
-
h
DC current gain (V = 6V, I = 2mA)  
FE(1)  
130  
400  
CE  
C
Collector-emitter saturation voltage (I = 100mA, I = 10mA)  
V
V
0.25  
C
B
CE(sat)  
BE(sat)  
-
-
V
Base-emitter voltage (I = 100mA, I = 10mA)  
1
-
C
B
V
80  
Transition frequency (V = 10V, I = 1mA, f= 30MHZ)  
f
T
MHz  
CE  
C
CLASSIFICATION OF h  
FE(1)  
RANK  
Range  
L
H
130 - 200  
200 - 400  
DEVICE MARKING  
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
HF  
2007-3  

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