Datasheet > C1815

C1815

更新时间： 2024-02-21 15:26:30

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	38K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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C1815 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
最大集电极电流 (IC)：	0.15 A	配置：	Single
最小直流电流增益 (hFE)：	120	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.4 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

C1815 数据手册

Spec. No. : HE6523

Issued Date : 1992.11.25

Revised Date : 2001.06.06

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HSC1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC1815 is designed for use in driver stage of AF amplifier

general purpose amplification.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 60 V

VCEO Collector to Emitter Voltage ..................................................................................... 50 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current....................................................................................................... 150 mA

IB Base Current ............................................................................................................... 50 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=60V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

100

250

700

IEBO

VEB=5V, IC=0

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

IC=100mA, IB=10mA

VCE=6V, IC=2mA

VCE=6V, IC=150mA

VCE=10V, IC=1mA, f=100MHz

VCB=10V, f=1MHz, IE=0

120

MHz

Cob

3.5

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE1

Rank

200-400

350-700

Range

120-240

HSC1815

HSMC Product Specification

12 3

中文翻译

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