1.5 Micron CMOS Process Family
Features
• LO MOS Processes (2.7~3.6 Volts Low Voltage Option)
V
• 1.2 Volts Very Low Voltage Option
• 5.5 Volts Maximum Operating Voltage
• Double Poly / Double Metal
Process parameters
• 3 µm Poly and Metal I Pitch
• ProToDuctionTM Option for low cost prototypes
1.5mm
Units
• 150mm Wafers
Metal I pitch (width/space)
Metal II pitch (width/space)
Poly pitch (width/space)
Contact
1.5 / 1.5
2.0 / 1.8
1.5 / 1.5
1.5 x 1.5
1.8 x 1.8
1.5
mm
mm
mm
mm
mm
mm
mm
mm
mm
Å
Description
The 1.5µm process provides the flexibility, speed and packing density needed
in mixed signal designs. The aggressive design rules make it comparable to
most 1.2 µm processes. 3 volts and a 1.2 volts options are also available for low
voltage applications; they offer low and matched threshold voltages for
improved dynamic range.
Via
Gate geometry
P-well junction depth
N+ junction depth (5V&3V / 1.2V)
P+ junction depth
3.0
Technology outline
• Drain Engineered Structure to Ensure Reliability against Hot-Carrier Injection
0.28 / 0.20
0.28
• Planarization with SOG Sandwich Structure
• Nitride Passivation for Reliability against Moisture
• Latchup Free Process on Non-Epi Material Achieved with Optimized I/O Protection
Gate oxide thickness
Inter poly oxide thickness
270
480
Å
MOSFET Electrical Parameters
1.5 MICRON - 1.2 volts
1.5 MICRON - 3 volts
N Channel P Channel
1.5 MICRON - 5 volts
N Channel P Channel
Units
Conditions
N Channel
P Channel
min. typ. max. min. typ. max. min. typ. max. min. typ. max. min. typ. max. min. typ. max.
Vt (50x1.5mm)
0.30 0.40 0.50 0.30 0.40 0.50 0.35 0.50 0.65 0.35 0.50 0.65 0.55 0.70 0.85 0.55 0.70 0.85
V
Saturation
Ids (50x1.5mm)
Gain b (50x1.5mm)
260
110
280
120
196 240
2.90
78 100
0.80
mA/mm
Vds=Vgs=5V
2.92
1.05
3.50
1.05
mA/V2 Linear (1.2V&3.0V)
Saturation (5V)
Body Factor (50x50mm)
Bvdss (50x1.5mm)
Subthreshold Slope
Substrate Current
Field Threshold
0.50
10
0.77
9
0.52
12
0.75
12
0.45
10 12
93
0.81
Öv
5
5
7
7
10
10
12
101
NA
20
V
mV/dec.
mA/mm
V
Ids=20nA
Vds=0.1V
85
105
NA
14
87
106
NA
14
Vds=5.5V, Vgs=2.3V
1.1
15
0.26
15
0.21
10
10
10
10
10 17
1.2
Ids = 1mA/square
Ldrawn =1.5mm
L Effective
1.27
1.12
1.09
1.05
1.2
mm
Gate Propagation Delay
Propagation Delay Time per Stage
(47 Stage Ring Oscillator)
Typ. = 2.4 ns @1.2V
Typ. = 530 ps @3.3V
Typ. = 380 ps @5.0V
P 6.3/1.5
N 2.3/1.5
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
Fax
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
www.dalsasemi.com
email: dalsasales@dalsasemi.com