5秒后页面跳转
C15ABC PDF预览

C15ABC

更新时间: 2024-09-12 23:39:11
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 51K
描述
Mixed-Signal CMOS and specialized analog processes

C15ABC 数据手册

 浏览型号C15ABC的Datasheet PDF文件第2页 
1.5 Micron CMOS Process Family  
Features  
• LO MOS Processes (2.7~3.6 Volts Low Voltage Option)  
V
• 1.2 Volts Very Low Voltage Option  
• 5.5 Volts Maximum Operating Voltage  
• Double Poly / Double Metal  
Process parameters  
• 3 µm Poly and Metal I Pitch  
• ProToDuctionTM Option for low cost prototypes  
1.5mm  
Units  
• 150mm Wafers  
Metal I pitch (width/space)  
Metal II pitch (width/space)  
Poly pitch (width/space)  
Contact  
1.5 / 1.5  
2.0 / 1.8  
1.5 / 1.5  
1.5 x 1.5  
1.8 x 1.8  
1.5  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
Å
Description  
The 1.5µm process provides the flexibility, speed and packing density needed  
in mixed signal designs. The aggressive design rules make it comparable to  
most 1.2 µm processes. 3 volts and a 1.2 volts options are also available for low  
voltage applications; they offer low and matched threshold voltages for  
improved dynamic range.  
Via  
Gate geometry  
P-well junction depth  
N+ junction depth (5V&3V / 1.2V)  
P+ junction depth  
3.0  
Technology outline  
• Drain Engineered Structure to Ensure Reliability against Hot-Carrier Injection  
0.28 / 0.20  
0.28  
• Planarization with SOG Sandwich Structure  
• Nitride Passivation for Reliability against Moisture  
• Latchup Free Process on Non-Epi Material Achieved with Optimized I/O Protection  
Gate oxide thickness  
Inter poly oxide thickness  
270  
480  
Å
MOSFET Electrical Parameters  
1.5 MICRON - 1.2 volts  
1.5 MICRON - 3 volts  
N Channel P Channel  
1.5 MICRON - 5 volts  
N Channel P Channel  
Units  
Conditions  
N Channel  
P Channel  
min. typ. max. min. typ. max. min. typ. max. min. typ. max. min. typ. max. min. typ. max.  
Vt (50x1.5mm)  
0.30 0.40 0.50 0.30 0.40 0.50 0.35 0.50 0.65 0.35 0.50 0.65 0.55 0.70 0.85 0.55 0.70 0.85  
V
Saturation  
Ids (50x1.5mm)  
Gain b (50x1.5mm)  
260  
110  
280  
120  
196 240  
2.90  
78 100  
0.80  
mA/mm  
Vds=Vgs=5V  
2.92  
1.05  
3.50  
1.05  
mA/V2 Linear (1.2V&3.0V)  
Saturation (5V)  
Body Factor (50x50mm)  
Bvdss (50x1.5mm)  
Subthreshold Slope  
Substrate Current  
Field Threshold  
0.50  
10  
0.77  
9
0.52  
12  
0.75  
12  
0.45  
10 12  
93  
0.81  
Öv  
5
5
7
7
10  
10  
12  
101  
NA  
20  
V
mV/dec.  
mA/mm  
V
Ids=20nA  
Vds=0.1V  
85  
105  
NA  
14  
87  
106  
NA  
14  
Vds=5.5V, Vgs=2.3V  
1.1  
15  
0.26  
15  
0.21  
10  
10  
10  
10  
10 17  
1.2  
Ids = 1mA/square  
Ldrawn =1.5mm  
L Effective  
1.27  
1.12  
1.09  
1.05  
1.2  
mm  
Gate Propagation Delay  
Propagation Delay Time per Stage  
(47 Stage Ring Oscillator)  
Typ. = 2.4 ns @1.2V  
Typ. = 530 ps @3.3V  
Typ. = 380 ps @5.0V  
P 6.3/1.5  
N 2.3/1.5  
For More Information:  
DALSA Semiconductor Sales  
18 Boulevard de l’Aéroport  
Bromont, Québec, Canada  
J2L 1S7  
Tel :  
Fax  
(450) 534-2321 ext. 1448  
(800) 718-9701  
(450) 534-3201  
www.dalsasemi.com  
email: dalsasales@dalsasemi.com  

与C15ABC相关器件

型号 品牌 获取价格 描述 数据表
C15C ASI

获取价格

Silicon Controlled Rectifier, 3000mA I(T), 300V V(DRM)
C15C DIGITRON

获取价格

SILICON CONTROLLED RECTIFIER,300V V(DRM),3A I(T),TO-208AB
C15C POWEREX

获取价格

Silicon Controlled Rectifier, 3000mA I(T), 300V V(DRM),
C15D DIGITRON

获取价格

SILICON CONTROLLED RECTIFIER,400V V(DRM),3A I(T),TO-208AB
C15D ASI

获取价格

Silicon Controlled Rectifier, 3000mA I(T), 400V V(DRM)
C15D POWEREX

获取价格

Silicon Controlled Rectifier, 3000mA I(T), 400V V(DRM),
C-15-D01-PD-FCH SOURCE

获取价格

Receiver, 1480nm Min, 1650nm Max, FC Connector, Through Hole Mount-right Angle
C-15-D01-PD-FCH-G5 SOURCE

获取价格

Receiver, 1480nm Min, 1650nm Max, FC Connector, Through Hole Mount-right Angle, HERMETICAL
C-15-D01-PD-FCL/APC SOURCE

获取价格

Receiver, 1480nm Min, 1650nm Max, FC/APC Connector, Through Hole Mount-right Angle
C-15-D01-PD-FCL/APC-G5 SOURCE

获取价格

Receiver, 1480nm Min, 1650nm Max, FC/APC Connector, Through Hole Mount-right Angle