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C122F1G

更新时间： 2024-11-05 04:10:27
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
4页 60K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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C122F1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：7.48Is Samacsys：N
外壳连接：ANODE标称电路换相断开时间：50 µs
配置：SINGLE最大直流栅极触发电流：25 mA
最大直流栅极触发电压：1.5 V最大维持电流：60 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：0.5 mA
通态非重复峰值电流：90 A元件数量：1
端子数量：3最大通态电流：8000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：50 V重复峰值反向电压：50 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

C122F1G 数据手册

 浏览型号C122F1G的Datasheet PDF文件第2页浏览型号C122F1G的Datasheet PDF文件第3页浏览型号C122F1G的Datasheet PDF文件第4页 
C122F1, C122B1  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls and power supplies; or wherever  
half−wave silicon gate−controlled, solid−state devices are needed.  
http://onsemi.com  
Features  
SCRs  
8 AMPERES RMS  
50 thru 200 VOLTS  
• Glass Passivated Junctions and Center Gate Fire for Greater  
Parameter Uniformity and Stability  
• Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Blocking Voltage to 200 Volts  
G
• Pb−Free Packages are Available*  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage  
V
V
DRM,  
(Note 1) (T = 25 to 100°C, Sine Wave,  
V
RRM  
4
J
50 to 60 Hz; Gate Open)  
C122F1  
50  
C122B1  
200  
A
YW  
TO−220AB  
CASE 221A  
STYLE 3  
On-State RMS Current  
I
8.0  
90  
A
A
C122F1G  
AKA  
T(RMS)  
(180° Conduction Angles; T = 75°C)  
C
1
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz,  
I
2
TSM  
3
T
= 75°C)  
C
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
34  
A s  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
= Diode Polarity  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
W
C122F1  
G
(Pulse Width = 10 ms, T = 70°C)  
C
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
(t = 8.3 ms, T = 70°C)  
AKA  
C
Forward Peak Gate Current  
I
GM  
(Pulse Width = 10 ms, T = 70°C)  
C
PIN ASSIGNMENT  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
1
Cathode  
Anode  
Gate  
T
stg  
2
3
4
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Device  
C122F1  
Package  
Shipping  
TO220AB  
500 Units / Box  
500 Units / Box  
C122F1G  
TO220AB  
(Pb−Free)  
C122B1  
TO220AB  
500 Units / Box  
500 Units / Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
C122B1G  
TO220AB  
(Pb−Free)  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
C122F1/D  
 
1234

中文翻译

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C122F1G 替代型号

型号 品牌 替代类型 描述 数据表
C122F1 ONSEMI

完全替代

 Silicon Controlled Rectifiers Reverse Blocking Thyristors
2N6509G LITTELFUSE

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TYN608RG STMICROELECTRONICS

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