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C10P60FR PDF预览

C10P60FR

更新时间: 2022-03-20 11:05:59
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THINKISEMI /
页数 文件大小 规格书
2页 688K
描述
10 Ampere Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers

C10P60FR 数据手册

 浏览型号C10P60FR的Datasheet PDF文件第2页 
C10P20FR thru C10P60FR  
®
C10P20FR/C10P40FR/C10P60FR  
Pb Free Plating Product  
10 Ampere Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers  
TO-220AB  
Unit:mm  
Features  
±0.20  
±0.20  
4.50  
9.90  
20  
±0.  
0
Latest GPP technology with super fast recovery time  
Low forward voltage drop  
3.6  
±0.20  
1.30  
φ
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
±0.20  
2.40  
Plating Power Supply,SMPS,EPS and UPS  
±0.20  
1.27  
±0.20  
1.52  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
±0.20  
0.80  
Case: TO-220C heatsink package outline  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
2.54typ  
2.54typ  
±0.20  
0.50  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "FD" Suffix "FS"  
Series Connection  
Negative  
Common Cathode Common Anode  
Suffix "F" Suffix "FR"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
C10P20FR C10P40FR C10P60FR  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=100oC  
10.0  
100  
1.3  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 5.0 A  
1.7  
VF  
IR  
0.98  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5.0  
100  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
35  
65  
pF  
o
R JC  
2.2  
C/W  
Operating Junction and Storage  
Temperature Range  
o
C
-55 to +150  
TJ, TSTG  
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.05  
© 2006 Thinki Semiconductor Co., Ltd.  

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