C106

更新时间： 2024-01-22 19:57:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅
页数	文件大小	规格书
4页	102K
描述
SCRs 4 AMPERES RMS 50 thru 600 VOLTS

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技术参数
数据手册

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C106 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	外壳连接：	ANODE
标称电路换相断开时间：	40 µs	配置：	SINGLE
最大直流栅极触发电流：	0.2 mA	最大直流栅极触发电压：	0.8 V
最大维持电流：	3 mA	JEDEC-95代码：	TO-202
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	最高工作温度：	110 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大均方根通态电流：	4 A
重复峰值关态漏电流最大值：	10 µA	断态重复峰值电压：	30 V
重复峰值反向电压：	30 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	SCR	Base Number Matches：	1

C106 数据手册

Order this document

by C106/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

*Motorola preferred devices

. . . Glassivated PNPN devices designed for high volume consumer applications such

as temperature, light, and speed control; process and remote control, and warning

systems where reliability of operation is important.

SCRs

4 AMPERES RMS

50 thru 600 VOLTS

•

Glassivated Surface for Reliability and Uniformity

Power Rated at Economical Prices

Practical Level Triggering and Holding Characteristics

Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

CASE 77-08

(TO-225AA)

STYLE 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

Volts

DRM

(R = 1 kΩ)

C106F

C106A

C106B

C106D

C106M

(T = –40° to 110°C)

RRM

100

200

400

600

RMS Forward Current

(All Conduction Angles)

Amps

T(RMS)

Average Forward Current

(T = 30°C)

2.55

T(AV)

Peak Non-repetitive Surge Current

TSM

(1/2 Cycle, 60 Hz, T = –40 to +110°C)

Circuit Fusing (t = 8.3 ms)

Peak Gate Power

I t

1.65

0.5

0.1

0.2

A s

Watt

Amp

Average Gate Power

G(AV)

Peak Forward Gate Current

GFM

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)

RRM

DRM

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a

constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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