C103B

更新时间： 2024-10-27 22:39:47

品牌	Logo	应用领域
CENTRAL		可控硅整流器
页数	文件大小	规格书
2页	123K
描述
SILICON CONTROLLED RECTIFIER

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中文翻译

获取价格

数据手册

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C103B 数据手册

DATA SHEET

C103Y

C103YY

C103A

C103B

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

TO-92 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for

control systems and sensing circuit applications.

MAXIMUM RATINGS (T =25°C unless otherwise noted)

SYMBOL

C103Y

C103YY

C103A

100

C103B

200

UNITS

Peak Repetitive Off-State Voltage

DRM, RRM

RMS On-State Current (T =60°C)

Peak One Cycle Surge

0.8

T(RMS)

TSM

8.0

0.5

8.0

1.0

0.01

Peak Forward Gate Current

Peak Reverse Gate Voltage

Peak Gate Power Dissipation (tp=8.3ms)

Average Gate Power Dissipation

Storage Temperature

°C

G(AV)

-65 to +150

-65 to +125

stg

Junction Temperature

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

1.0

UNITS

µA

, I

Rated V

, V

, R =1KΩ

DRM RRM

DRM RRM GK

, I

Rated V

, V

, T =125°C, R =1KΩ

200

500

5.0

µA

DRM RRM

DRM RRM GK

V =6.0V, R =100Ω, R =1KΩ

V =6.0V, R =100Ω, R =1KΩ, T =-65°C

=1KΩ

=1KΩ, T =-65°C

V =6.0V, R =100Ω

0.8

1.0

V =6.0V, R =100Ω, T =-65°C

V =6.0V, R =1KΩ, T =125°C

0.1

=1.0A

1.5

dv/dt

V =V

, T =125°C, R =1KΩ

V/µs

DRM

(SEE REVERSE SIDE)

中文翻译

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与C103B相关器件

型号	品牌	获取价格	描述	数据表
C103BLEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, PL
C103Y	CENTRAL	获取价格	SILICON CONTROLLED RECTIFIER
C103YLEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-92, PLAS
C103YY	CENTRAL	获取价格	SILICON CONTROLLED RECTIFIER
C103YYLEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-92, PLAS
C103YYPBFREE	CENTRAL	获取价格	Silicon Controlled Rectifier,
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C104	VECTRON	获取价格	Standard 4-Pin DIP Package Enable Function
C10423	HAMAMATSU	获取价格	DRIVING CIRCUIT
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