Datasheet > C1008

C1008

更新时间： 2024-11-01 12:54:35

品牌	Logo	应用领域
KISEMICONDUCTOR		晶体晶体管
页数	文件大小	规格书
2页	149K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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C1008 数据手册

NPN SILICON TRANSISTO

C1008

K I SEMICONDUCTOR

█ LOW FREQUENCY AMPLIFIER MEDIUM

SPEED SWITCHING

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg——Storage Temperature………………………… -55~150℃

T_j——Junction Temperature…………………………………150℃

P_C——Collector Dissipation…………………………………800mW

1―Emitter，E

2―Base，B

_CBO——Collector-Base Voltage………………………………80V

_CEO——Collector-Emitter Voltage……………………………60V

_EBO——Emitter-Base Voltage………………………………8V

3―Collector，C

I_C——Collector Current……………………………………700mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector Cut-off Current

Min

Typ

Max Unit

Test Conditions

ICBO

IEBO

V_CB=60V, I_E=0

100 nA

400

Emitter Cut-off Current

V_EB=5V, I_C=0

HFE(1)

VCE(sat)

VBE(sat)

BVCBO

BVCEO

BVEBO

DC Current Gain

V_CE=2V, I_C=50mA

I_C=500mA, I_B=50mA

I_C=100μA, I_E=0

I_C=10mA, I_B=0

I_E=10μA，I_C=0

V_CE=10V, I_C=50mA

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Current Gain-Bandwidth Product

Output Capacitance

0.2 0.4 V

0.86 1.1 V

30 50

MHz

Cob

pF V_CB=10V, I_E=0，f=1MHz

█ hFE Classification

40—80

70—140

120—240

240—400

中文翻译

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