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BZX85C4V3PT PDF预览

BZX85C4V3PT

更新时间: 2024-01-04 09:00:16
品牌 Logo 应用领域
力勤 - CHENMKO 二极管齐纳二极管局域网
页数 文件大小 规格书
4页 135K
描述
SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.7V TO 200V

BZX85C4V3PT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:7.22
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.3 W
认证状态:Not Qualified标称参考电压:4.3 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.98%
工作测试电流:50 mABase Number Matches:1

BZX85C4V3PT 数据手册

 浏览型号BZX85C4V3PT的Datasheet PDF文件第2页浏览型号BZX85C4V3PT的Datasheet PDF文件第3页浏览型号BZX85C4V3PT的Datasheet PDF文件第4页 
BZX85C 2V7PT  
THRU  
CHENMKO ENTERPRISE CO.,LTD  
AXIAL LEAD  
SILICON PLANAR POWER ZENER DIODES  
BZX85C 200PT  
VOLTAGE RANGE 2.7V TO 200V  
FEATURE  
* High temperature soldering type.  
* ESD rating of class 3(>16 kV) per human body model.  
* Silicon planar zener diodes.  
DO-41  
* Silcon-oxide passivated junction.  
* Low temperature coefficient voltage  
(
)
)
.034 0.87  
MECHANICAL  
* Axial-lead hermetically sealed package.  
* DO-41 Packaging.  
DIA.  
(
.028 0.71  
(
)
1.1 27.9  
MIN.  
* Cathode indicated by polarity band.  
* Mounting position: Any.  
* Weight: Approx. 0.35g.  
(
)
)
.217 5.51  
(
.160 4.06  
(
)
.107 2.72  
DIA.  
(
)
.080 2.03  
(
)
1.1 27.9  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
DO-41  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
UNITS  
Zener Current ( see Table "Characteristics" )  
-
-
1.0  
-
o
Max. Steady State Power Dissipation @TL=75 C,Lead Length=3/8"  
Max. Operating Temperature Range  
PD  
W
oC  
oC  
+200  
TJ  
-65 to +200  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Thermal Resistance Junction to Ambient  
Max. Instantaneous Forward Voltage at IF= 100mA  
SYMBOL  
MIN.  
TYP.  
MAX.  
130  
UNITS  
oC/W  
R
JA  
-
-
-
-
VF  
1.0  
Volts  
2001-6  
NOTES : 1. The numbers listd have a standaerd tolerance on the normal zener voltage of +5%.  
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%  
of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee  
on the breakdown curve to eliminate unstable units.  
3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature.  
4. Measured under thermal equilibrium and DC test conditions.  
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave  
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT.  

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