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BZX85C10B PDF预览

BZX85C10B

更新时间: 2024-11-13 13:06:07
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试高压
页数 文件大小 规格书
6页 102K
描述
Zener Diode, 10V V(Z), 6.077%, 1.3W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN

BZX85C10B 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:1.3 W
认证状态:Not Qualified标称参考电压:10 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
最大电压容差:6.077%工作测试电流:25 mA
Base Number Matches:1

BZX85C10B 数据手册

 浏览型号BZX85C10B的Datasheet PDF文件第2页浏览型号BZX85C10B的Datasheet PDF文件第3页浏览型号BZX85C10B的Datasheet PDF文件第4页浏览型号BZX85C10B的Datasheet PDF文件第5页浏览型号BZX85C10B的Datasheet PDF文件第6页 
BZX85-Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes  
FEATURES  
• Silicon planar power Zener diodes  
• For use in stabilizing and clipping circuits with  
high power rating  
• The Zener voltages are graded according to the  
international E 24 standard. Replace suffix “C”  
with “B” for 2 % tolerance  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
APPLICATIONS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.7 to 100  
2.7 to 80  
Pulse current  
Single  
UNIT  
V
• Voltage stabilization  
mA  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZX85-series  
BZX85-series-TR  
5000 (52 mm tape on 13" reel)  
25 000/box  
5000 per ammopack  
(52 mm tape)  
BZX85-series  
BZX85-series-TAP  
25 000/box  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
310 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
DO-41  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Valid provided that leads at a distance of 4 mm  
from case are kept at ambient temperature  
Power dissipation  
Zener current  
Ptot  
1300  
mW  
See Table “Electrical characteristics”  
Valid provided that leads at a distance of 4 mm  
from case are kept at ambient temperature  
Junction to ambient air  
RthJA  
110  
K/W  
Tj  
Junction temperature  
175  
°C  
°C  
Tstg  
Storage temperature range  
- 55 to + 175  
Rev. 2.1, 22-Nov-11  
Document Number: 85607  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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