Datasheet > BZX84C9V1

BZX84C9V1

更新时间： 2024-11-04 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管测试光电二极管
页数	文件大小	规格书
2页	114K
描述
Planar Die Construction, 350mW Power Dissipation

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中文翻译

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BZX84C9V1 数据手册

Product specification

BZX84C9V1

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Planar Die Construction

350mW Power Dissipation

Ideally Suited for Automated Assembly Processes

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Forward Voltage at I^F= 10 mA

Power Dissipation *

Symbol

V^F

Rating

0.9

Unit

P^D

350

Junction Temperature

T^j

150

Storage Temperature Range

Thermal Resistance Junction to Ambient Air *

T^S

-65 to + 150

417

R^thA

*Device mounted on FR-4 PC board with recommended pad layout,

Electrical Characteristics Ta = 25 (unless otherwise noted)

Typical Temperature

Coefficient

@ I^ZT

Maximum

Reverse

Current

Zener Voltage

Maximum Zener

Impedance

Range

Type

mV/

Number

Z^ZT@

V^Z@ I^ZT

Z^ZK@ I^ZK

IZT

I^ZT

Min

3.8

Max

Nom (V)

9.1

Min (V) Max (V)

5.0

1.0

BZX84C9V1

8.5

9.6

100

0.5

*1. Short duration test pulse used to minimize self-heating effect.

*2. f = 1KHz.

Marking

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

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