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BZX84C4V7R PDF预览

BZX84C4V7R

更新时间: 2024-11-28 12:59:15
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
8页 117K
描述
DIODE VOLTAGE REGULATOR DIODE, TO-236AA, MICRO MINIATURE PACKAGE-3, Voltage Regulator Diode

BZX84C4V7R 技术参数

生命周期:Active零件包装代码:SOT-346
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
Is Samacsys:N二极管类型:ZENER DIODE
JEDEC-95代码:TO-236AAJESD-30 代码:R-PDSO-G3
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BZX84C4V7R 数据手册

 浏览型号BZX84C4V7R的Datasheet PDF文件第2页浏览型号BZX84C4V7R的Datasheet PDF文件第3页浏览型号BZX84C4V7R的Datasheet PDF文件第4页浏览型号BZX84C4V7R的Datasheet PDF文件第5页浏览型号BZX84C4V7R的Datasheet PDF文件第6页浏览型号BZX84C4V7R的Datasheet PDF文件第7页 
BZX84-V-G-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
3
• Silicon planar power Zener diodes  
• The zener voltages are graded according to the  
international E 24 standard. Standard zener  
voltage tolerance is 5 ꢀ. Replace “C” with “B”  
for 2 ꢀ tolerance.  
1
2
• AEC-Q101 qualified  
20421  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Note  
PRIMARY CHARACTERISTICS  
** Please see document “Vishay Material Category Policy”:  
www.vishay.com/doc?99902  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.4 to 75  
2; 5  
UNIT  
V
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZX84-V-series-G-18  
BZX84-V-series-G-08  
TAPED UNITS PER REEL  
10 000 (8 mm tape on 13" reel)  
3000 (8 mm tape on 7" reel)  
MINIMUM ORDER QUANTITY  
BZX84-V-G-series  
10 000  
15 000  
BZX84-V-G-series  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
8.1 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
SOT-23  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Tamb = 25 °C,  
device on fiberglass substrate,  
acc. layout on page 7  
Power dissipation  
Ptot  
300  
mW  
Tamb = 25 °C,  
device on fiberglass substrate,  
acc. layout on page 7  
Thermal resistance junction to ambient air  
RthJA  
420  
150  
K/W  
°C  
Tj  
Junction temperature  
Tstg  
Storage temperature range  
- 65 to + 150  
°C  
Rev. 1.1, 29-Sep-11  
Document Number: 83458  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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