BZX84C4V7ET3G

更新时间： 2024-09-20 13:06:07

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器
页数	文件大小	规格书
6页	78K
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BZX84C4V7ET3G 数据手册

BZX84C2V4ET1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

http://onsemi.com

Specification Features

Cathode

Anode

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Peak Power − 225 W (8 X 20 ms)

SOT−23

CASE 318

STYLE 8

• Pb−Free Package is Available

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

MARKING DIAGRAM

xxxM

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

xxx = Specific Device Code

= Date Code

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

ORDERING INFORMATION

Peak Power Dissipation @ 20 ms (Note 1)

225

Watts

†

@ T ≤ 25°C

Device

Package

Shipping

Total Power Dissipation on FR−5 Board,

BZX84CxxxET1

SOT−23

3000/Tape & Reel

(Note 2) @ T = 25°C

225

1.8

mW/°C

BZX84CxxxET1G SOT−23

(Pb−Free)

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

BZX84CxxxET3

SOT−23 10,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Total Power Dissipation on Alumina

Substrate, (Note 3) @ T = 25°C

300

2.4

mW/°C

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

°C

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

Junction and Storage

Temperature Range

T , T

−65 to

+150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

July, 2004 − Rev. 3

BZX84C2V4ET1/D

12 3 4 5 6

中文翻译

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与BZX84C4V7ET3G相关器件

型号	品牌	获取价格	描述	数据表
BZX84C4V7-G	VISHAY	获取价格	Silicon planar Zener diodes
BZX84C4V7-G3-18	VISHAY	获取价格	DIODE ZENER 4.7V 300MW SOT23-3
BZX84C4V7GS08	VISHAY	获取价格	4.7V, 0.35W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SOT-23, 3 PIN
BZX84C4V7-GS08	VISHAY	获取价格	Zener Diode, 4.7V V(Z), 5%, 0.35W,
BZX84C4V7GS18	VISHAY	获取价格	Zener Diode, 4.7V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC, SOT-23, 3 PIN
BZX84C4V7-GS18	VISHAY	获取价格	Zener Diode, 4.7V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC, SOT-23, 3 PIN
BZX84C4V7-GT1	SENSITRON	获取价格	Zener Diode, 4.7V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC PACKAGE-3
BZX84C4V7HE3	MCC	获取价格	Tape : 3K/Reel, 120K/Ctn;
BZX84C4V7-HE3-08	VISHAY	获取价格	DIODE ZENER 4.7V 300MW SOT23-3
BZX84C4V7-HE3-18	VISHAY	获取价格	DIODE ZENER 4.7V 300MW SOT23-3

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