5秒后页面跳转
BZX84B56-V PDF预览

BZX84B56-V

更新时间: 2024-01-04 16:33:40
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
11页 457K
描述
Small Signal Zener Diodes

BZX84B56-V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.67Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
标称参考电压:56 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2%Base Number Matches:1

BZX84B56-V 数据手册

 浏览型号BZX84B56-V的Datasheet PDF文件第2页浏览型号BZX84B56-V的Datasheet PDF文件第3页浏览型号BZX84B56-V的Datasheet PDF文件第4页浏览型号BZX84B56-V的Datasheet PDF文件第5页浏览型号BZX84B56-V的Datasheet PDF文件第6页浏览型号BZX84B56-V的Datasheet PDF文件第7页 
BZX84-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• These diodes are also available in other  
case styles and other configurations  
including: the SOD-123 case with type  
designation BZT52 series, the dual zener  
3
e3  
diode common anode configuration in the SOT-23  
case with type designation AZ23 series and the  
dual zener diode common cathode configuration  
in the SOT-23 case with type designation DZ23  
series.  
1
2
18078  
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener volt-  
age tolerance is 5 ꢀ. Replace "C" with "B" for  
2 ꢀ tolerance.  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
• Silicon Planar Power Zener Diodes  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Ptot  
Value  
300 1)  
Unit  
mW  
1) Device on fiberglass substrate, see layout.  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
420 1)  
150  
Thermal resistance junction to ambient air  
°C/W  
Junction temperature  
Tj  
°C  
°C  
Storage temperature range  
TS  
- 65 to + 150  
1) Device on fiberglass substrate, see layout.  
Document Number 85763  
Rev. 1.7, 14-Jul-05  
www.vishay.com  
1

与BZX84B56-V相关器件

型号 品牌 获取价格 描述 数据表
BZX84B56-V-G VISHAY

获取价格

Small Signal Zener Diodes
BZX84B56-VGS08 VISHAY

获取价格

DIODE 56 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTI
BZX84B56-VGS18 VISHAY

获取价格

DIODE 56 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTI
BZX84B56W PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODES
BZX84B56W-AU PANJIT

获取价格

SOT-323
BZX84B5V1 YAGEO

获取价格

Zener Diode, 5.1V V(Z), 2%, 0.35W, Silicon, Unidirectional
BZX84B5V1 DIOTEC

获取价格

Zener Diode
BZX84B5V1 MCC

获取价格

Silicon 350 mWatt Zener Diodes
BZX84B5V1 SEMTECH

获取价格

SILICON PLANAR ZENER DIODES
BZX84B5V1 PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODES