Datasheet > BZX584C5V1H

BZX584C5V1H

更新时间： 2024-11-10 14:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1392K
描述
SOD-523

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BZX584C5V1H 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-523 Plastic-Encapsulate Diodes

SOD-523

BZX584C5V1H ZENER DIODE

FEATURES



Planar die construction



General purpose, medium current

Ideally suited for automated assembly processes

Available in lead free version

MARKING: H8

MAXIMUM RATINGS(T_a=25℃ unless otherwise specified)

Symbol

Parameter

Value

250

Unit

℃/W

℃

P_D

Power Dissipation(Note 1)

R_ΘJA

Thermal Resistance from Junction to Ambient

833

Operation Junction and Storage Temperature Range

T_J,T_stg

-55~+150

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_Z

Test conditions

I_ZT=5mA

Min

Typ

Max

5.5

Unit

Zener voltage range (Note 2)

5.1

Z_ZT

I_ZT=5mA

I_ZK=1mA

V_R=2V

Maximum zener impedance(Note 3)

Ω

Z_Zk

450

Maximum reverse current (Note 2)

Forward voltage (Note 2)

I_R

μA

V_R=4.2V

I_F= 10mA

V_F

0.9

Device mounted on a 1 in.²ceramic PCB which spread 2 ounces of copper.

Notes: 1.

2.Short duration test pulse used to minimize self-heating effect.

3. f=1kH_Z

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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