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BZX55C51/TR PDF预览

BZX55C51/TR

更新时间: 2024-11-04 13:06:07
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
8页 137K
描述
DIODE 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode

BZX55C51/TR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-35
包装说明:GLASS PACKAGE-2针数:2
Reach Compliance Code:unknown风险等级:5.65
Is Samacsys:NBase Number Matches:1

BZX55C51/TR 数据手册

 浏览型号BZX55C51/TR的Datasheet PDF文件第2页浏览型号BZX55C51/TR的Datasheet PDF文件第3页浏览型号BZX55C51/TR的Datasheet PDF文件第4页浏览型号BZX55C51/TR的Datasheet PDF文件第5页浏览型号BZX55C51/TR的Datasheet PDF文件第6页浏览型号BZX55C51/TR的Datasheet PDF文件第7页 
BZX55-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Very sharp reverse characteristic  
• Low reverse current level  
• Very high stability  
e2  
• Low noise  
• Available with tighter tolerances  
• Lead (Pb)-free component  
94 9367  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
• Voltage stabilization  
Mechanical Data  
Case: DO35 glass case  
Weight: approx. 125 mg  
Cathode Band Color: black  
Packaging Codes/Options:  
TR/10 k per 13" reel, 30 k/box  
TAP/10 k per ammopack (52 mm tape), 30 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Ptot  
Value  
500  
Unit  
mW  
Power dissipation  
Z-current  
l = 4 mm, TL = 25 °C  
IZ  
Ptot/VZ  
mA  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
Thermal resistance junction to ambient air l = 4 mm, TL = constant  
Junction temperature  
300  
175  
K/W  
°C  
Tj  
Storage temperature range  
Tstg  
- 65 to + 175  
°C  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
1.5  
Unit  
Forward voltage  
IF = 200 mA  
V
Document Number 85604  
Rev. 1.5, 05-Jul-07  
www.vishay.com  
1

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