Datasheet > BZX55C3V9

BZX55C3V9

更新时间： 2024-11-27 06:45:11

品牌	Logo	应用领域
美台 - DIODES		二极管齐纳二极管测试
页数	文件大小	规格书
3页	170K
描述
500mW ZENER DIODE

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中文翻译

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数据手册

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BZX55C3V9 数据手册

BZX55C2V4 - BZX55C75

500mW ZENER DIODE

SIG

T R

Features

- 1

E 1

Very Sharp Reverse Characteristic

Low Reverse Current Level

Very High Stability

Low Noise

Mechanical Data

DO-35

Min

25.40

—

Dim

Max

—

Case: DO-35, Glass

Terminals: Solderable per MIL-STD-202,

Method 208

4.00

0.60

2.00

—

Polarity: Cathode Band

Approx. Weight: 0.13 grams

—

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

500

Unit

K/W

Test Condition

Lead length = 4.0mm, T_L= 25°C

P_d

I_Z

Power Dissipation

P_d/V_Z

300

Zener Current

Lead length = 4.0mm, T_L= constant

I_F= 200mA

qJA

Thermal Resistance, Junction to Ambient Air

Forward Voltage

V_F

1.5

T_j,T_STG

-65 to +175

°C

Operating and Storage Temperature Range

DS18013 Rev. 3 - 3

1 of 3

BZX55C2V4-BZX55C75

12 3

中文翻译

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BZX55C3V9.TR	FAIRCHILD	获取价格	Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35
BZX55C3V9.TR	SYNSEMI	获取价格	Zener Diode, 3.9V V(Z), 5.1%, 0.5W,
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