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BZX55C3V0 PDF预览

BZX55C3V0

更新时间: 2024-11-20 09:05:39
品牌 Logo 应用领域
强茂 - PANJIT 二极管
页数 文件大小 规格书
3页 76K
描述
AXIAL LEAD ZENER DIODES

BZX55C3V0 数据手册

 浏览型号BZX55C3V0的Datasheet PDF文件第2页浏览型号BZX55C3V0的Datasheet PDF文件第3页 
BZX55C2V4~BZX55C100  
AXIAL LEAD ZENER DIODES  
POWER  
500 mWatts  
VOLTAGE  
2.4 to 100 Volts  
FEATURES  
• Planar Die construction  
• 500mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: Molded glass DO-35  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: See Diagram Below  
• Approx. Weight: 0.13 grams  
• Mounting Position: Any  
• Ordering information: Suffix :” -35” to order DO-35 Package  
• Packing information  
B
- 2K per Bulk box  
T/R - 10K per 13" plastic Reel  
T/B - 5K per horiz. tape & Ammo box  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)  
Parameter  
Power Dissipation at Tamb = 25 OC  
Symbol  
Value  
500  
Units  
mW  
PTOT  
Junction Temperature  
175  
OC  
OC  
TJ  
Ts  
Storage Temperature Range  
-65 to +175  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
Parameter  
Symbol  
RθJA  
Min.  
--  
Typ.  
--  
Max.  
Units  
Thermal Resistance Junction to Ambient Air  
0.3  
1
K/mW  
V
Forward Voltage at IF = 100mA  
--  
VF  
--  
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
STAD-FEB.10.2009  
1
PAGE . 1  

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