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BZX55B39-TR PDF预览

BZX55B39-TR

更新时间: 2024-11-13 13:06:07
品牌 Logo 应用领域
威世 - VISHAY 二极管测试
页数 文件大小 规格书
6页 72K
描述
ZENER DIODE DO35-E2 - Tape and Reel

BZX55B39-TR 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-35包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.72其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:90 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-PALF-W2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified参考标准:AEC-Q101
标称参考电压:39 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.05%工作测试电流:2.5 mA
Base Number Matches:1

BZX55B39-TR 数据手册

 浏览型号BZX55B39-TR的Datasheet PDF文件第2页浏览型号BZX55B39-TR的Datasheet PDF文件第3页浏览型号BZX55B39-TR的Datasheet PDF文件第4页浏览型号BZX55B39-TR的Datasheet PDF文件第5页浏览型号BZX55B39-TR的Datasheet PDF文件第6页 
BZX55B...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Low noise  
Very high stability  
Available with tighter tolerances  
V –tolerance ± 2%  
Z
94 9367  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =100mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85604  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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