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BZX55B39 PDF预览

BZX55B39

更新时间: 2024-11-13 11:55:23
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
2页 38K
描述
SILICON ZENER DIODES

BZX55B39 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
Is Samacsys:N二极管类型:ZENER DIODE
Base Number Matches:1

BZX55B39 数据手册

 浏览型号BZX55B39的Datasheet PDF文件第2页 
SILICON ZENER DIODES  
DO - 35  
BZX55B2V0 ~ BZX55B100  
VZ : 2.0 - 100 Volts  
PD : 500 mW  
1.00 (25.4)  
0.079(2.0 )max.  
min.  
FEATURES :  
0.150 (3.8)  
max.  
* Complete 2.0 to 100 Volts  
* High surge current capability  
* High peak reverse power dissipation  
* High reliability  
1.00 (25.4)  
0.020 (0.52)max.  
min.  
* Low leakage current  
* Zener Voltage tolerance is ± 2%  
* Pb / RoHS Free  
Dimensions in inches and ( millimeters )  
MECHANICAL DATA  
* Case : Molded glass  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
* Polarity : Color band denotes cathode end. When operated in zener mode,  
cathode will be positive with respect to anode  
* Mounting position : Any  
* Weight : 0.13 gram (approx.)  
MAXIMUM RATINGS  
Rating at 25 °C ambient temperature unless otherwise specified  
Rating  
Symbol  
Value  
Unit  
PD  
Power Dissipation (Note1)  
500  
mW  
Maximum Forward Voltage at IF =100 mA  
Maximum Thermal Resistance Junction to Ambient Air (Note1)  
Junction Temperature Range  
VF  
1.0  
V
°C/W  
°C  
300  
RqJA  
Tj  
- 65 to + 200  
- 65 to + 200  
Ts  
Storage Temperature Range  
°C  
Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.  
Page 1 of 2  
Rev. 05 : June 25, 2005  

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