Datasheet > BZX55-C3V0

BZX55-C3V0

更新时间： 2024-11-20 04:50:39

品牌	Logo	应用领域
强茂 - PANJIT		二极管
页数	文件大小	规格书
4页	126K
描述
AXIAL LEAD ZENER DIODES

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数据手册

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BZX55-C3V0 数据手册

DATA SHEET

BZX55-C SERIES

AXIAL LEAD ZENER DIODES

Unit: inch (mm)

DO-35

POWER

500 mWatts

VOLTAGE

2.4 to 47 Volts

FEATURES

.020(0.52)TYP.

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

MECHANICALDATA

.079(2.0)MAX.

• Case: Molded glass DO-35

• Terminals: Solderable per MIL-STD-202, Method 208

• Polarity: See Diagram Below

• Approx. Weight: 0.13 grams

• Mounting Position: Any

• Ordering information: Suffix :” -35” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 13" plastic Reel

T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)

Parameter

Power Dissipation at Tamb = 25 ^OC

Symbol

Value

500

Units

TOT

Junction Temperature

175

^OC

Storage Temperature Range

-65 to +175

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Parameter

Symbol

RthA

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

0.3

K/mW

Forward Voltage at IF = 100mA

Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

STAD-SEP.14.2004

PAGE . 1

12 3 4

中文翻译

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