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BZX384C33-V-GS18 PDF预览

BZX384C33-V-GS18

更新时间: 2024-11-14 03:09:39
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管稳压二极管
页数 文件大小 规格书
8页 100K
描述
DIODE 33 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Voltage Regulator Diode

BZX384C33-V-GS18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.38配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:33 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10最大电压容差:5%
工作测试电流:2 mABase Number Matches:1

BZX384C33-V-GS18 数据手册

 浏览型号BZX384C33-V-GS18的Datasheet PDF文件第2页浏览型号BZX384C33-V-GS18的Datasheet PDF文件第3页浏览型号BZX384C33-V-GS18的Datasheet PDF文件第4页浏览型号BZX384C33-V-GS18的Datasheet PDF文件第5页浏览型号BZX384C33-V-GS18的Datasheet PDF文件第6页浏览型号BZX384C33-V-GS18的Datasheet PDF文件第7页 
BZX384-V-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
• Silicon planar power Zener diodes  
• The Zener voltages are graded according to the  
international E 24 standard  
• Standard Zener voltage tolerance is  
replace “C” with “B” for 2 ꢀ tolerance  
5 ꢀ%  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.4 to 75  
2% 5  
UNIT  
V
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZX384-V-series-GS18  
BZX384-V-series-GS08  
TAPED UNITS PER REEL  
10 000 (8 mm tape on 13" reel)  
3000 (8 mm tape on 7" reel)  
MINIMUM ORDER QUANTITY  
10 000/box  
BZX384-V-series  
BZX384-V-series  
15 000/box  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
4.3 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
SOD-323  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Power dissipation  
Device on fiberglass substrate  
Ptot  
200  
650  
mW  
Valid that electrodes are kept at ambient  
temperature  
Junction to ambient air  
RthJA  
K/W  
Tj  
Junction temperature  
150  
°C  
°C  
Tstg  
Storage temperature range  
- 65 to + 150  
Rev. 1.8, 22-Nov-11  
Document Number: 85764  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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