BZW50-12B

更新时间： 2024-09-15 22:06:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	80K
描述
TRANSILTM

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中文翻译

获取价格

数据手册
替代型号

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BZW50-12B 数据手册

BZW50-10,B/180,B

TRANSIL^TM

FEATURES

PEAK PULSE POWER : 5000 W (10/1000µs)

STAND-OFF VOLTAGERANGE :

From 10V to 180V

UNI AND BIDIRECTIONAL TYPES

LOW CLAMPING FACTOR

FAST RESPONSE TIME

UL RECOGNIZED

DESCRIPTION

Transil diodes provide high overvoltage protection

by clamping action. Their instantaneous response

to transient overvoltages makes them particularly

suited to protect voltage sensitive devices such

as MOS Technology and low voltage supplied

IC’s.

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

P_PP

Parameter

Peakpulse power dissipation (see note 1)

Power dissipation on infinite heatsink

Value

5000

6.5

Unit

Tj initial = T_amb

_amb= 75°C

I_FSM

Non repetitive surge peak forward current

for unidirectionaltypes

tp = 10ms

Tj initial = T_amb

500

T_stg

T_j

Storagetemperature range

Maximum junction temperature

- 65 to + 175

175

°C

T_L

Maximum lead temperaturefor soldering during 10s at 5mm

from case

230

°C

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol

R_{th (j-l)}

Parameter

Value

Unit

°C/W

Junction to leads

Junction to ambient on printed circuit. L_lead= 10 mm

R_{th (j-a)}

January 1998 Ed : 2

1/5

12 3 4 5

中文翻译

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BZW50-12B 替代型号

型号	品牌	替代类型	描述	数据表
5KP12CA	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 5000 Watt Axial Leaded Transient Voltage Suppressor

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