Datasheet > BZW06-5V8

BZW06-5V8

更新时间： 2024-11-29 17:00:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		电视
页数	文件大小	规格书
3页	285K
描述
5.8V,600W, TVS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW06-5V8 数据手册

GALAXY ELECTRICAL

BZW06 --- SERIES

BREAKDOWN VOLTAGE: 5.8 --- 376 V

PEAK PULSE POWER: 600 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has Underwriters Laboratory

◇

Flammability Classification 94V-0

Glass passivated junction

DO - 15

◇

600W peak pulse power capability with a 10/1000µs

◇

waveform, repetition rate (duty cycle): 0.01%

Excellent clamping capability

◇

Fast response time: typicallyless than 1.0ps from 0 Volts to

_(BR)for uni-directional and 5.0ns for bi-directional types

Devices with V

10V I_Dare typically I_Dless than 1.0 µA

(BR)

◇

≥

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 5Ibs. (2.3kg) tension

℃

MECHANICAL DATA

Case:JEDEC DO--15, molded plastic body over

◇

passivated junction

Terminals: Axial leads, solderable per MIL-STD-750,

◇

method 2026

Dimensions in millimeters

Polarity: Foruni-directional types the color band denotes

◇

the cathode, which is postitive with respect to the

anode under normal TVS operation

Weight: 0.014 ounces, 0.39 grams

Mounting position: Any

◇

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix letter "B" (e.g. BZW06P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

℃

SYMBOL

P_PPM

VALUE

UNIT

Peak pow er sissipation w ith a 10/1000µs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000µs w aveform (NOTE1)

Minimum 600

SEE TABLE 1

I_PPM

Steady state pow er dissipation at T_L=75

℃

P_M(AV)

I_FSM

3.0

fffffLead lengths 0.375"(9.5mm) (NOTE2)

Peak forw ard surge current, 8.3ms single half

ffffSine-w ave superimposed on rated load (JEDEC Method)

100.0

Thermal resistance junction to lead

R_θJL

R _θJA

100

℃

junction to ambient lead = 10mm

Operating junction and storage temperature range

T_J, T_STG

-55---+150

℃

NOTES: (1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25°C per Fig. 2

Rating is 500W betw een 40V and 188V types. For a surge greater than the maximum values, the diode w ill short circuit.

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 1685008B

12 3

中文翻译

下载PDF

与BZW06-5V8相关器件

型号	品牌	获取价格	描述	数据表
BZW06-5V8(6.8V)	ETC	获取价格	Transient Voltage Suppressor (TVS)
BZW06-5V8/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, PLASTIC, F126, 2
BZW06-5V8/376	ETC	获取价格	TRANSIL
BZW06-5V8/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, PLASTIC, F126, 2
BZW06-5V8/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, PLA
BZW06-5V8_07	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes
BZW06-5V8_07	DIOTEC	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor Diodes
BZW065V8_18	DIOTEC	获取价格	Transient Voltage Suppressor Diodes
BZW06-5V8376	STMICROELECTRONICS	获取价格	PEAK PULSE POWER 600 W (10/1000ms)
BZW06-5V8A	SUNMATE	获取价格	600 Watts Axial Leaded Transient Voltage Suppressors

与BZW06-5V8相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW06-5V8

BZW06-5V8 数据手册

与BZW06-5V8相关器件

与BZW06-5V8相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW06-5V8

BZW06-5V8 数据手册

与BZW06-5V8相关器件

与BZW06-5V8相关文章

您还可以找

您在本页遇到什么问题？