5秒后页面跳转
BZW06-256 PDF预览

BZW06-256

更新时间: 2024-02-12 00:44:12
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
7页 126K
描述
TRANSIL

BZW06-256 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.27
其他特性:LOW CAPACITANCE最大击穿电压:315 V
最小击穿电压:285 V击穿电压标称值:300 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:256 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BZW06-256 数据手册

 浏览型号BZW06-256的Datasheet PDF文件第2页浏览型号BZW06-256的Datasheet PDF文件第3页浏览型号BZW06-256的Datasheet PDF文件第4页浏览型号BZW06-256的Datasheet PDF文件第5页浏览型号BZW06-256的Datasheet PDF文件第6页浏览型号BZW06-256的Datasheet PDF文件第7页 
BZW06-5V8/376  
BZW06-5V8B/376B  
®
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
STAND-OFF VOLTAGE RANGE :  
From 5.8V to 376 V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
DO-15  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
1.7  
W
IFSM  
Non repetitive surge peak forward current  
for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s a 5mm  
from case.  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
100  
February 2003 - Ed : 3A  
1/6  

与BZW06-256相关器件

型号 品牌 获取价格 描述 数据表
BZW06-256(300V) ETC

获取价格

Transient Voltage Suppressor (TVS)
BZW06-256/1 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, PLASTIC, F126, 2
BZW06-256/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 256V V(RWM), Unidirectional, 1 Element, Silicon, PLA
BZW06-256/73 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 256V V(RWM), Unidirectional, 1 Element, Silicon, PLA
BZW06-256-73 VISHAY

获取价格

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN
BZW06-256B BL Galaxy Electrical

获取价格

TRANSIENT VOLTAGE SUPPRESSOR
BZW06-256B TSC

获取价格

Transient Voltage Suppressor Diodes
BZW06-256B TAYCHIPST

获取价格

Voltage regulator dides
BZW06-256B SEMIKRON

获取价格

Trans Voltage Suppressor Diode, 600W, 256V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW06-256B VISHAY

获取价格

Trans Voltage Suppressor Diode, 256V V(RWM), Bidirectional