BZW04P273B

更新时间： 2024-11-26 06:45:07

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	106K
描述
TRANSZORB® Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW04P273B 数据手册

BZW04P-5V8 thru BZW04-376

Vishay General Semiconductor

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Availablein uni-directionaland bi-directional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

DO-204AL (DO-41)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

V_WM

5.8 V to 376 V

P_PPM

400 W

1.5 W

40 A

P_D

I_FSM(uni-directional only)

T_Jmax.

175 °C

MECHANICAL DATA

Case: DO-204AL, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use

BZW04P-6V4B).

suffix (e.g.

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Note: BZW04-213(B) ~ BZW04-376(B) for commercial grade only

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

400

See next table

1.5

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for BZW04P(-)188 and below; V_F= 5.0 V for BZW04P(-)213 and above

Document Number: 88316

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与BZW04P273B相关器件

型号	品牌	获取价格	描述	数据表
BZW04P273B/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 273V V(RWM), Bidirectional,
BZW04P273B/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 273V V(RWM), Bidirectional,
BZW04P273B/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P273B/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与BZW04P273B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P273B

BZW04P273B 数据手册

与BZW04P273B相关器件

与BZW04P273B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P273B

BZW04P273B 数据手册

与BZW04P273B相关器件

与BZW04P273B相关文章

您还可以找

您在本页遇到什么问题？