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BZW04-256B-E3/51 PDF预览

BZW04-256B-E3/51

更新时间: 2024-11-27 03:35:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 89K
描述
Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

BZW04-256B-E3/51 数据手册

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BZW04P-5V8 thru BZW04-376  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in Unidirectional and Bidirectional  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-204AL (DO-41)  
• Typical I less than 1 µA above 10 V rating  
D
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
MAJOR RATINGS AND CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
VWM  
5.8 V to 376 V  
PPPM  
400 W  
PD  
1.0 W  
IFSM (Unidirectional only)  
Tj max.  
40 A  
175 °C  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over passivated chip  
Epoxy meets UL 94V-0 flammability rating  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional types, use B suffix (e.g. BZW04P-6V4B).  
Electrical characteristics apply in both directions.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: For unidirectional types the color band  
denotes cathode end, no marking on bidirectional  
types  
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
Minimum 400  
see next table  
1.0  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
W
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)  
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2)  
Maximum instantaneous forward voltage at 25 A for unidirectional only (3)  
Operating junction and storage temperature range  
PD  
W
IFSM  
40  
A
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to + 175  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3) VF = 3.5 V for BZW04P(-)188 & below; VF = 5.0 V for BZW04P(-)213 & above  
Document Number 88316  
07-Jun-06  
www.vishay.com  
1

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