BZW03C12

更新时间： 2024-11-19 00:00:51

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管测试
页数	文件大小	规格书
6页	50K
描述
Silicon Z-Diodes and Transient Voltage Suppressors

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中文翻译

获取价格

数据手册

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BZW03C12 数据手册

BZW03C...

Vishay Telefunken

Silicon Z–Diodes and Transient Voltage Suppressors

Features

Glass passivated junction

Hermetically sealed package

Clamping time in picoseconds

Applications

94 9588

Voltage regulators and transient suppression circuits

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Test Conditions

l=10mm, T =25 C

Type Symbol

Value

6.0

1.85

1000

175

Unit

T =45 C

amb

Repetitive peak reverse power dissipation

Non repetitive peak surge power dissipation t =100 s, T =25 C

Junction temperature

ZRM

ZSM

Storage temperature range

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient l=25mm, T =constant

Test Conditions

Symbol

Value

Unit

K/W

thJA

on PC board with spacing 37.5mm

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

Type

Symbol Min

Typ Max Unit

1.2

I =1A

Document Number 85602

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5 6

中文翻译

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